SI7407DN Search Results

SI7407DN Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI7407DN		Vishay Siliconix	MOSFETs	Original	PDF	42.77KB	5
Si7407DN SPICE Device Model		Vishay	P-Channel 12-V (D-S) MOSFET	Original	PDF	184.96KB	3
SI7407DN-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 9.9A PPAK 1212-8	Original	PDF		12
SI7407DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 9.9A PPAK 1212-8	Original	PDF		12

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Vishay Siliconix


Vishay Siliconix SI7407DN-T1-E3 MOSFET P-CH 12V 9.9A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7407DN-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now
Vishay Siliconix SI7407DN-T1-GE3 MOSFET P-CH 12V 9.9A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7407DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now

SI7407DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si7407DN Contextual Info: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7407DN 29-Mar-03	PDF
Contextual Info: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated	Original	Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 11-Mar-11	PDF
Contextual Info: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated	Original	Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si7407DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt	Original	Si7407DN 07-mm S-21197--Rev. 29-Jul-02	PDF
Si7407DN Contextual Info: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated	Original	Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 18-Jul-08	PDF
Contextual Info: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.012 @ VGS = –4.5 V –15.6 0.016 @ VGS = –2.5 V –13.5 0.024 @ VGS = –1.8 V –11 • TrenchFET Power MOSFETS: 1.8-V Rated	Original	Si7407DN 07-mm Si7407DN-T1 S-51210 27-Jun-05	PDF
Contextual Info: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.012 at VGS = – 4.5 V – 15.6 0.016 at VGS = – 2.5 V – 13.5 0.024 at VGS = – 1.8 V – 11 • TrenchFET Power MOSFETS: 1.8-V Rated	Original	Si7407DN 07-mm Si7407DN-T1 08-Apr-05	PDF
Contextual Info: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated	Original	Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7407DN Contextual Info: Si7407DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt	Original	Si7407DN 07-mm S-22122--Rev. 25-Nov-02	PDF
002VGS Contextual Info: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.012 @ VGS = –4.5 V –15.6 0.016 @ VGS = –2.5 V –13.5 0.024 @ VGS = –1.8 V –11 • TrenchFET Power MOSFETS: 1.8-V Rated	Original	Si7407DN 07-mm Si7407DN-T1 08-Apr-05 002VGS	PDF
ultra low igss pA Abstract: Si7407DN Contextual Info: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.012 at VGS = – 4.5 V – 15.6 0.016 at VGS = – 2.5 V – 13.5 0.024 at VGS = – 1.8 V – 11 • TrenchFET Power MOSFETS: 1.8-V Rated	Original	Si7407DN 07-mm Si7407DN-T1 S-51210 27-Jun-05 ultra low igss pA	PDF
Contextual Info: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated	Original	Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 08-Apr-05	PDF
C 4977 Abstract: AN609 Si7407DN 69211 Contextual Info: Si7407DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7407DN AN609 23-Jul-07 C 4977 69211	PDF
Si7407DN Contextual Info: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7407DN 18-Jul-08	PDF