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    8216

    Abstract: 9622 diode 7449 AN609
    Contextual Info: Si7324DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si7324dnan60910-sep-078216+29622diode 7449 PDF

    Si7324DN

    Abstract: si7324
    Contextual Info: SPICE Device Model Si7324DN Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7324dn18-jul-08si7324 PDF