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    SI7121ADN Search Results

    SI7121ADN Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7121ADN-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V D-S PPAK 1212-8 Original PDF 13
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    SI7121ADN Price and Stock

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    Vishay Intertechnologies SI7121ADN-T1-GE3

    Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A
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    TME SI7121ADN-T1-GE3 1
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    Avnet Americas SI7121ADN-T1-GE3 Tape & Reel 52 Weeks 6,000
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    Mouser Electronics SI7121ADN-T1-GE3
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    Newark () SI7121ADN-T1-GE3 Tape & Reel 6,000
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    SI7121ADN-T1-GE3 Tape & Reel 3,000
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    Quest Components SI7121ADN-T1-GE3 336
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    Vishay Huntington SI7121ADN-T1-GE3

    MOSFET P-CH 30V D-S PPAK 1212-8
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    Win Source Electronics SI7121ADN-T1-GE3 30,000
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    SI7121ADN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    62930

    Contextual Info: Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) 0.0150 at VGS = -10 V -18 e 0.0200 at VGS = -6 V -18 e 0.0260 at VGS = -4.5 V -18 • TrenchFET Power MOSFET Qg (TYP.) • Low thermal resistance PowerPAK® package


    Original
    si7121adn2002/95/ec2011/65/eujs709a+202-oct-1262930 PDF

    Contextual Info: Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) 0.0150 at VGS = -10 V -18 e 0.0200 at VGS = -6 V -18 e 0.0260 at VGS = -4.5 V -18 • TrenchFET Power MOSFET Qg (TYP.) • Low thermal resistance PowerPAK® package


    Original
    si7121adn2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    si7121adn2002/95/ec2011/65/eujs709a+102-oct-12 PDF