SI5945DU Search Results

Contextual Info: Si5945DU New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.072 @ VGS = –4.5 V –6a 0.100 @ VGS = –2.5 V –6a 0.131 @ VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

74129

Abstract: Si5945DU
Contextual Info: SPICE Device Model Si5945DU Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5945DU New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.072 @ VGS = –4.5 V –6a 0.100 @ VGS = –2.5 V –6a 0.131 @ VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

s936

Abstract: Si5945DU si5945
Contextual Info: Si5945DU New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.072 @ VGS = –4.5 V –6a 0.100 @ VGS = –2.5 V –6a 0.131 @ VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

74129

Abstract: Si5945DU
Contextual Info: SPICE Device Model Si5945DU Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5945DU

Abstract: Si5945
Contextual Info: Si5945DU New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.072 @ VGS = –4.5 V –6a 0.100 @ VGS = –2.5 V –6a 0.131 @ VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

AN609

Abstract: Si5945DU 34616
Contextual Info: Si5945DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT