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    SI5935CDC Search Results

    SI5935CDC Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI5935CDC-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 1206-8 Original PDF 11
    SI5935CDC-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 1206-8 Original PDF 11
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    Vishay Intertechnologies SI5935CDC-T1-GE3

    - Tape and Reel (Alt: SI5935CDC-T1-GE3)
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    Avnet Americas SI5935CDC-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI5935CDC-T1-GE3 14,776
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    Newark () SI5935CDC-T1-GE3 Tape & Reel 3,000
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    SI5935CDC-T1-GE3 Tape & Reel 3,000
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    Bristol Electronics SI5935CDC-T1-GE3 575
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    Vishay Intertechnologies SI5935CDC-T1-E3

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    Mouser Electronics SI5935CDC-T1-E3 2,104
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    TTI SI5935CDC-T1-E3 Reel 6,000 3,000
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    Bristol Electronics SI5935CDC-T1-E3 366 1
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    Quest Components SI5935CDC-T1-E3 292
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    Vishay Siliconix SI5935CDC-T1-GE3

    SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
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    Vishay Intertechnologies SI5935CDCT1GE3

    DUAL P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI5935CDCT1GE3 47,750
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    SI5935CDC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code DK

    Abstract: SI5935CDC
    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		si5935cdc2002/95/ecsi5935cdc-t1-e3si5935cdc-t1-ge3+32011/65/eu12-mar-12marking code dk PDF

    SI5935CDC

    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		si5935cdc2002/95/ecsi5935cdc-t1-e32011/65/eu+2js709a02-oct-12 PDF

    SI5935CDC-T1-E3

    Abstract: Si5935CDC
    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) (Ω) ID (A) 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 Qg (Typ.) 6.2 nC • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		si5935cdcsi5935cdc-t1-e318-jul-08 PDF

    4392 mosfet

    Abstract: 4392 MOSfet 4392 Si5935CDC AN609
    Contextual Info: Si5935CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		si5935cdcan60902-oct-084392 mosfet+24392mosfet 4392 PDF

    Si5935CDC

    Abstract: S8288
    Contextual Info: SPICE Device Model Si5935CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		si5935cdc18-jul-08s8288 PDF

    SI5935CDC-T1-E3

    Abstract: SI5935CDC
    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		si5935cdc2002/95/ecsi5935cdc-t1-e318-jul-08 PDF

    SI5935CDC-T1-E3

    Abstract: SI5935CDC Si5935DC Si5935DC-T1-E3
    Contextual Info: Specification Comparison Vishay Siliconix Si5935CDC vs. Si5935DC Description: Package: Pin Out: Dual P-Channel, 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5935CDC-T1-E3 replaces Si5935DC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		si5935cdcsi5935dcsi5935cdc-t1-e3si5935dc-t1-e3+127-oct-08 PDF

    SI5935CDC

    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		si5935cdc2002/95/ecsi5935cdc-t1-e32011/65/eu+112-mar-12 PDF

    MARKING CODE dk

    Abstract: SI5935CDC
    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		si5935cdc2002/95/ecsi5935cdc-t1-e3si5935cdc-t1-ge3+211-mar-11marking code dk PDF

    smd transistor m6

    Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor
    Contextual Info: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —


    Original     		ata68709184bsmd transistor m6n1 smd transistor+7smd transistor dnsmd transistor m11active cell balancingsmd transistor m7smd transistor n2cell balancingm6 smd transistor PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF