Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4943DY Search Results

    SI4943DY Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si4943DY
    Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF 36.79KB 4
    SI4943DY
    Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET Original PDF 38.54KB 4
    Si4943DY SPICE Device Model
    Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 197.64KB 3
    SF Impression Pixel

    SI4943DY Price and Stock

    Vishay Siliconix

    Vishay Siliconix SI4943DY-T1-E3

    6300MA, 20V, 2 CHANNEL, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4943DY-T1-E3 1,925
    • 1 $2.00
    • 10 $2.00
    • 100 $2.00
    • 1000 $0.83
    • 10000 $0.75
    Buy Now

    SI4943DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si4943DY

    Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems


    Original
    si4943dy18-jul-08 PDF

    Si4943BDY-T1-E3

    Abstract: Si4943BDY Si4943DY Si4943DY-T1-E3
    Contextual Info: Specification Comparison Vishay Siliconix Si4943BDY vs. Si4943DY Description: Dual P-Channel, 20 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4943BDY-T1 Replaces Si4943DY-T1 Si4943BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4943DY-T1-E3


    Original
    si4943bdysi4943dysi4943bdy-t1si4943dy-t1+3si4943bdy-t1-e3si4943dy-t1-e308-nov-06 PDF

    Si4943DY

    Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = –10 V –8.4 0.030 @ VGS = –4.5 V –6.7 D Load Switching – Computer – Game Systems


    Original
    si4943dys-04374--rev06-aug-01 PDF

    Si4943DY

    Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems


    Original
    si4943dys-21192--rev29-jul-02 PDF

    Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems


    Original
    si4943dy08-apr-05 PDF

    Si4943DY

    Contextual Info: SPICE Device Model Si4943DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4943dy0-to-10v29-jul-02 PDF

    Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = -10 V -8.4 0.030 @ VGS = -4.5 V - 6.7 D Load Switching - Computer - Game Systems


    Original
    si4943dys-21192--rev29-jul-02 PDF

    4295

    Abstract: u 4863 AN609 Si4943DY 7027-2
    Contextual Info: Si4943DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4943dyan60920-jan-064295+2u 48637027-2 PDF