SI4943CDY Search Results
SI4943CDY Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4943CDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 8A 8-SOIC | Original | 10 | |||
| SI4943CDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 8A 8-SOIC | Original | 10 |
SI4943CDY Price and Stock
Vishay Intertechnologies SI4943CDY-T1-GE3Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4943CDY-T1-GE3 | 659 | 8 |
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SI4943CDY-T1-GE3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4943CDY-T1-GE3 | Cut Strips | 659 | 52 Weeks | 1 |
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SI4943CDY-T1-GE3 | Bulk | 2,066 | 1 |
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| SI4943CDY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4943CDY-T1-GE3 | Cut Tape | 2,500 |
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SI4943CDY-T1-GE3 | Reel | 5,000 | 2,500 |
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SI4943CDY-T1-GE3 | 2,500 |
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SI4943CDY-T1-GE3 | 54 Weeks | 2,500 |
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SI4943CDY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Intertechnologies SI4943CDY-T1-E3- Tape and Reel (Alt: SI4943CDY-T1-E3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4943CDY-T1-E3 | Tape & Reel | 52 Weeks | 2,500 |
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Buy Now | |||||
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SI4943CDY-T1-E3 | Tape & Reel | 2,500 |
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Buy Now | ||||||
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SI4943CDY-T1-E3 | Reel | 2,500 |
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SI4943CDY-T1-E3 | 2,500 |
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SI4943CDY-T1-E3 | 53 Weeks | 2,500 |
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SI4943CDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+2 | |
SI4943CDYContextual Info: SPICE Device Model Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range |
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si4943cdys-81935-rev08-sep-08 | |
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Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+2 | |
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Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 Qg (Typ.) RoHS |
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si4943cdysi4943cdy-t1-e318-jul-08 | |
Si4943CDY-T1-E3Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 Qg (Typ.) RoHS |
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si4943cdysi4943cdy-t1-e308-apr-05 | |
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Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+1 | |
mosfet 4423
Abstract: C 3866 0539 AN609
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si4943cdyan60911-apr-08mosfet 4423+2 | |
S8193Contextual Info: SPICE Device Model Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range |
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si4943cdy18-jul-08s8193 | |
Si4943CDY-T1-E3
Abstract: Si4943CDY-T1-GE3 Si4943CDY
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+1 | |
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Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+3 | |
TB-17
Abstract: Si4943CDY-T1-E3 Si4943CDY-T1-GE3
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si4943cdy2002/95/ecsi4943cdy-t1-e3si4943cdy-t1-ge3+2 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
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