SI4835 Search Results

SI4835BDY-T1-E3

Abstract: Si4835DY SI4835BDY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 15TR13
Contextual Info: Specification Comparison Vishay Siliconix Si4835BDY vs. Si4835DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4835BDY Replaces Si4835DY Si4835BDY-E3 (Lead (Pb)-free version) Replaces Si4835DY Si4835BDY-T1 Replaces Si4835DY-T1

Si4835BDY

Abstract: 39TV
Contextual Info: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches

Si4835BDY

Abstract: Si4835BDY-T1
Contextual Info: Si4835BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −9.6 0.030 @ VGS = −4.5 V −7.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested Qg (Typ)

Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Contextual Info: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = -10 V -9.6 APPLICATIONS 0.030 @ VGS = -4.5 V - 7.5 D Load Switches

1232n-s

Abstract: 1232ns Si4835DY P-Channel 30 V D-S MOSFET
Contextual Info: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PC515

Abstract: PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511
Contextual Info: 1 2 3 4 7 8 1 L2 PQ2 SI4835DY SO8 L3 PL503 BEAD 0805C PF500 6.5A/32VDC 1206 PD1 RLZ24D MLL34B PC500 100U 25V PR5 0.02_1% 2512 PL505 75UH . L1 ADINP S D 3 2 1 6 ADINP 25 PL500 BEAD 0805C 1 5 PD504 SFPJ-73 DC2010 L5. L4 L6 BATT 25 G CONN_JACK20 PJ500 PC1 0.1U

Si4835DDY

Abstract: Si4835DDY-T1-GE3 Si4835BDY Si4835BDY-T1-E3 Si4835DDY-T1-E3 SI4835 Si4835BDY-T1 dsa0020630
Contextual Info: Specification Comparison Vishay Siliconix Si4835DDY vs. Si4835BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1-E3 Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1

Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

60703

Abstract: Si4835DY
Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "8.0 0.033 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4835DDY-T1-E3

Abstract: Si4835DDY 80433
Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

4835 fairchild

Abstract: 4835 mosfet mosfet 4835 Si4835DY 4835 so-8 4835 b
Contextual Info: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

am sw fm radio PCB schematic diagram

Abstract: 4831B30GU 4835b Si4831-B30 FM Receiver Schematic SI4835 radio Si4835-B30 pot 100k AN555 FM receiver integrated circuit automatic tune
Contextual Info: Si4831/35-B30 B R O A D C A S T M E C H A N I C A L TU N I N G A M / F M / S W R A D I O R EC EIVER Features        Worldwide FM band support 64–109 MHz Worldwide AM band support (504–1750 kHz) SW band support (Si4835 only) (5.6–22 MHz)

4835 fairchild

Abstract: 4835 mosfet Si4835DY 4835 b 19-NC
Contextual Info: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

74184

Abstract: Si4835CDY
Contextual Info: SPICE Device Model Si4835CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4835CDY

Contextual Info: Si4835CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.017 at VGS = - 10 V - 9.6 0.030 at VGS = - 4.5 V - 7.5 Qg (Typ) - 22 • TrenchFET Power MOSFETS • Advanched High Cell Density Process • 100 % Rg Tested

74625

Abstract: 4113 9940 AN609 Si4835BDY 74107N
Contextual Info: Si4835BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4835DY

Abstract: Si4835DY-T1
Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)

Si4835DDY

Contextual Info: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si4835BDY

Abstract: Si4835BDY-T1
Contextual Info: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches

Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

S-41912

Abstract: Si4835BDY Si4835BDY-T1
Contextual Info: Si4835BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −9.6 0.030 @ VGS = −4.5 V −7.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested Qg (Typ)

4831b30gu

Abstract: 4835B30GU SI4835-B30-GU Si4831-B30 Si4835 si4831 Si483x-B si4830 4835b si4835 an555
Contextual Info: Si4831/35-B30 广播机械调谐 AM/FM/SW 无线电接收器 特征        支持全球 FM 波段 64–109 MHz 支持全球 AM 波段 (504–1750 kHz) 支持 SW 波段 (Si4835 独有 ) (5.6–22 MHz) 卓越的真实世界性能 依据 EN55020 标准

Si4835DDY

Abstract: Si4835DDY-T1-E3 Si4835DDY-T1-GE3
Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET