SI4668DY Search Results

Contextual Info: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4668DY

Contextual Info: SPICE Device Model Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 12.4 nC APPLICATIONS

Contextual Info: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4668DY

Abstract: Si4668DY-T1-E3
Contextual Info: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4668DY

Abstract: Si4668DY-T1-E3
Contextual Info: New Product Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 12.4 nC APPLICATIONS

si4668

Abstract: Si4668DY Si4668DY-T1-E3
Contextual Info: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

AN609

Abstract: Si4668DY
Contextual Info: Si4668DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585