SI4480EY Search Results

Contextual Info: Si4480EY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 0.040 @ VGS = 6.0 V 5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel)

Si4480EY

Contextual Info: Si4480EY New Product Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.2 0.040 @ VGS = 6.0 V "5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4480EY New Product Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.2 0.040 @ VGS = 6.0 V "5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4480EY

Abstract: Si4480EY-T1 62A50
Contextual Info: Si4480EY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 0.040 @ VGS = 6.0 V 5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel)

16880

Abstract: AN609 Si4480EY
Contextual Info: Si4480EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

62A50

Abstract: Si4480EY Si4480EY-T1
Contextual Info: Si4480EY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 0.040 @ VGS = 6.0 V 5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel)

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

sud*50n025-06p

Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m