SI4470EY Search Results

SI4470EY-T1-E3

Abstract: Si4470EY
Contextual Info: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4470EY

Abstract: Si4470EY-T1
Contextual Info: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S

7476 data sheet

Abstract: 7476 APPLICATION NOTES 7476 data sheet 7476 m 923 Si4470EY AN609 74305
Contextual Info: Si4470EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si4470ey-t1-e3

Contextual Info: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4470EY

Abstract: Si4470EY-T1
Contextual Info: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S

Contextual Info: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4470EY

Contextual Info: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4470EY

Contextual Info: Si4470EY New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch

Si4470EY

Contextual Info: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4470EY

Abstract: Si4470EY-T1
Contextual Info: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S

Si4470EY

Contextual Info: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4470EY

Contextual Info: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

340 opto isolator

Abstract: adapter 12v,2A 5V,2A kelvin 1102 HD01 LTC4269-1 LTC4269C-1 LTC4269CDKD-1 LTC4269I-1 LTC4269IDKD-1 PA1558NL
Contextual Info: LTC4269-1 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 4269-1 is an integrated Powered Device PD controller and switching regulator intended for high power IEEE 802.3at and 802.3af applications. The

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

R012F

Abstract: Siliconix mosfet guide XSTR C3225X5R1C226M LT3825 100ME22AX res 0603
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 894A-C 36V-72VIN, SYNCHRONOUS FLYBACK LT3825 DESCRIPTION Demonstration circuit 894A-C is a 36V-72Vin, synchronous flyback converter featuring the LT3825. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified flyback to

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

front end ieee

Abstract: ptz schematic diagram "power sourcing equipment"
Contextual Info: LTC4268-1 High Power PD With Synchronous No-Opto Flyback Controller Description Features Robust 35W PD Front End IEEE 802.3af Compliant n Rugged 750mA Power MOSFET With Precision Dual Level Current Limit n High Performance Synchronous Flyback Controller n IEEE Isolation Obtained Without an Opto-Isolator

CHSD6-60C

Abstract: CHSD6 a26544 C0805C473K5RAC CMPZ524B 1808JA250102MCTPY2 LM5072 PJ-102A LM5073 LM5576
Contextual Info: National Semiconductor Application Note 1574 Youhao Xi March 2007 Introduction Precautions The LM5073 evaluation board is designed as a low cost solution for both IEEE802.3af fully compliant and non-compliant Power over Ethernet PoE PD applications. The board also

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

U401 mosfet

Abstract: 10uf 25V electrolytic capacitor Power Jack 300 inverter schematic electrolytic capacitor 2200uf/50V power supply with regulator D313 mc33883 circuits smd diode R645 capacitor 2200uf/50v 2238 580 15623 MC33883
Contextual Info: 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual 56800 Hybrid Controller TPPSDDILUM Rev. 0 3/2006 freescale.com 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178