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    SI4447ADY Search Results

    SI4447ADY Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4447ADY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 7.2A 8SOIC Original PDF 10
    SF Impression Pixel

    SI4447ADY Price and Stock

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    Vishay Intertechnologies SI4447ADY-T1-GE3

    - Product that comes on tape, but is not reeled (Alt: 64T4066)
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    Avnet Americas () SI4447ADY-T1-GE3 Ammo Pack 1
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    SI4447ADY-T1-GE3 Tape & Reel 52 Weeks 2,500
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    Mouser Electronics SI4447ADY-T1-GE3 5,664
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    Newark () SI4447ADY-T1-GE3 Cut Tape 25,960 1
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    SI4447ADY-T1-GE3 Cut Tape 2,464 1
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    SI4447ADY-T1-GE3 Tape & Reel 2,464 10
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    Bristol Electronics SI4447ADY-T1-GE3 9,940
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    TME SI4447ADY-T1-GE3 43 1
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    Vishay Siliconix SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SOIC
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    RS SI4447ADY-T1-GE3 Bulk 2,500
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    Vishay Huntington SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SOIC
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    Win Source Electronics SI4447ADY-T1-GE3 97,140
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    SI4447ADY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si4447ADY www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4447ady2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Si4447

    Abstract: 78523
    Contextual Info: Si4447ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    si4447adyan6092022u3033m+71758m6182u9154m1324m2158msi444778523 PDF

    Si4447

    Abstract: Si4447ADY
    Contextual Info: SPICE Device Model Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4447ady18-jul-08si4447 PDF

    Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4447ady2002/95/ecsi4447ady-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4447ady2002/95/ecsi4447ady-t1-ge32011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4447ady2002/95/ecsi4447ady-t1-ge311-mar-11 PDF

    si4447ady

    Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4447ady2002/95/ecsi4447ady-t1-ge32011/65/eu+112-mar-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF