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SI4398DY Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4398DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC	Original	PDF		9
SI4398DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC	Original	PDF		9

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Vishay Intertechnologies


Vishay Intertechnologies SI4398DY-E3 - Rail/Tube (Alt: SI4398DY-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4398DY-E3	Tube			100	1 - 10 - 100 $2.04 1000 $1.91 10000 $1.91	Buy Now

SI4398DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4398DY Abstract: Si4398DY-T1-E3 Contextual Info: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance	Original	si4398dy si4398dy-t1-e3 08-apr-05	PDF
Contextual Info: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	si4398dy 2002/95/ec si4398dy-t1-e3 si4398dy-t1-ge3 +111-mar-11	PDF
C 4977 Abstract: AN609 Si4398DY Contextual Info: Si4398DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4398dy an609 26-sep-07 c 4977	PDF
Contextual Info: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4398dy s-72400 26-nov-07	PDF
70302 Abstract: S70302 si4398 Contextual Info: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance	Original	si4398dy si4398dy-t1-e3 18-jul-08 70302 +2s70302 si4398	PDF
Contextual Info: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for	Original	si4398dy si4398dy-t1-e3 si4398dy-t1-ge3 11-mar-11	PDF
Si4398DY Contextual Info: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4398dy 18-jul-08	PDF
Si4398DY Contextual Info: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4398dy s-51095rev 13-jun-05	PDF
Contextual Info: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	si4398dy 2002/95/ec si4398dy-t1-e3 si4398dy-t1-ge3 +22011/65/eu 12-mar-12	PDF
Si4398DY Abstract: Si4398DY-T1-E3 Si4398DY-T1-GE3 Contextual Info: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for	Original	si4398dy si4398dy-t1-e3 si4398dy-t1-ge3 18-jul-08	PDF
Contextual Info: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	si4398dy 2002/95/ec si4398dy-t1-e3 si4398dy-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
BS250KL-TR1-E3 Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8	Original	si3865bdv-t1-e3ct-nd si4720cy-t1-e3ct-nd si6924aedq-t1-e3ct-nd si1040x-t1-e3tr-nd +16si1865dl-t1-e3tr-nd si1869dh-t1-e3tr-nd si3861bdv-t1-e3tr-nd si3865bdv-t1-e3tr-nd si4720cy-t1-e3tr-nd si6924aedq-t1-e3tr-nd bs250kl-tr1-e3 si6435adq-t1-e3 tp0610kl si9435bdy-t1-e3ct si6467bdq-t1-e3 si1024x-t1-e3 si5855dc-t1-e3 sia411dj-t1-e3 sum110p06-07l-e3 d2pak si1903dl-t1-e3	PDF
Power MOSFET Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4	Original	si4642dy sie726df 1-1500uf 47-680uf +5power mosfet mosfet switch schottky diode 40v 2a schottky diode 30v mosfet	PDF
bridge rectifier 24V AC to 24v dc Abstract: 1N5408 smd diodes GSIB1560 Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4	Original	250ns do-204al do-41 do-220aa +5v-540v v-440v bridge rectifier 24v ac to 24v dc 1n5408 smd diodes gsib1560	PDF

gs 069 Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	sc-75 sc-75a sc-89 gs 069 +9powerpack 1212-8 si4946bey si2314eds si4430bdy tsop6 marking 345 tn2404k 1206-8 chipfet layout si4630dy sum110n04-04	PDF