SI3460 Search Results

Contextual Info: Si3460DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N

Si3460BDV

Abstract: 74388
Contextual Info: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

AN609

Abstract: Si3460DV
Contextual Info: Si3460DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3460BDV

Contextual Info: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3460DV

Contextual Info: Si3460DV New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET

qfn 3x3 dc-dc

Abstract: schematic diagram power supply Poe Iclass poe pse injector schematic diagram dc-dc Single Port Midspan Power Injector "power sourcing equipment" "power injector" "PSE controller"
Contextual Info: Si3460 Dual Function IEEE 802.3af PSE & DC-DC Controller Description Features The Si3460 is a single-port power management controller for IEEE 802.3af compliant Power Sourcing Equipment PSE . Designed to minimize system cost and ease of implementation in embedded PSE endpoint (switches) or

Si3460-EVB

Abstract: qfn 3x3 dc-dc Si3460 TLV431 transistor marking code D8 SI3460-E02 "power sourcing equipment" "power injector"
Contextual Info: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features 11 Si3460 GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND STATUS 11 3-point detection algorithm eliminates false detection events IEEE-compliant classification

pwm lm2904

Abstract: Venkel CR0603 10W TLV431 sot23 CR1210 LM319 data CR0805-10W-1004F C0603X7R101-471K 603 to252 95001-2881 CR0603
Contextual Info: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in:  An introduction to Power-over-Ethernet PoE and Power Sourcing Equipment (PSE) design considerations

Si3460DV

Contextual Info: SPICE Device Model Si3460DV N-Channel 20-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

74412

Abstract: Si3460BDV Si3460BDV-T1-E3
Contextual Info: Si3460BDV Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

installation diagram of ip camera

Abstract: laptop circuit diagram CAT5 cable dlink Wireless Camera Circuit Diagram circuit diagram of wireless camera RJ45 D-Link laptop power adapter circuit diagram dlink rj45 laptop led cable diagram ip camera
Contextual Info: AN336 Si3460-EVB P O E IP C A M E R A Q U I C K S TA R T G U I D E 1. Introduction This document describes how to set up and operate a Si3460-EVB to operate as a midspan injector for powering a D-Link DCS-1110 IP Camera. Images from the D-Link® camera can then be viewed on a standard web browser

SI3460BDV

Abstract: 74412
Contextual Info: Si3460BDV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3460

Abstract: Si3460-EVB Si3460-XYY-GM TLV431 wall wart schematic "power sourcing equipment" "power injector"
Contextual Info: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features Pin Assignments 11 Si3460 11 STATUS GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND 11 Robust 3-point detection algorithm eliminates false detection events IEEE-compliant classification

DIODE UF marking code

Abstract: QFN11 Si3460 Si3460-EVB Si3460-XYY-GM TLV431 "power sourcing equipment" "power injector"
Contextual Info: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features Pin Assignments 11 Si3460 11 STATUS GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND 11 Robust 3-point detection algorithm eliminates false detection events IEEE-compliant classification

Si3460DV

Contextual Info: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TSOP-6 .54

Abstract: SI3460DV
Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D

Si3460BDV

Abstract: SI3460BDV-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si3460DDV vs. Si3460BDV Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si3460DV-T1-E3

Abstract: Si3460BDV Si3460DV Si3460DV-T1 SI3460BDV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3460BDV vs. Si3460DV Description: N-Channel, 20 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3460BDV-T1-E3 Replaces Si3460DV-T1-E3 Si3460BDV-T1-E3 Replaces Si3460DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted