SI1467DH Search Results

S-81216-Rev

Abstract: Si1467DH Si1467DH-T1-E3
Contextual Info: New Product Si1467DH Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 1.6 - 20 0.115 at VGS = - 2.5 V - 1.6 0.150 at VGS = - 1.8 V - 1.6 Qg (Typ.) 9.0 nC • TrenchFET Power MOSFET

Si1467DH

Abstract: Si1467DH-T1-E3 si1467
Contextual Info: New Product Si1467DH Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC • TrenchFET Power MOSFET

Contextual Info: Si1467DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices

Si1467DH

Abstract: S-81645
Contextual Info: SPICE Device Model Si1467DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

3882 power

Abstract: AN609 Si1467DH
Contextual Info: Si1467DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si1467DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices

Contextual Info: Si1467DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices

Si1467DH

Abstract: Si1467DH-T1-E3 68663 Diode marking 27C
Contextual Info: Si1467DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices

Contextual Info: Si1467DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)c VDS (V) RDS(on) (Ω) 0.090 at VGS = - 4.5 V - 2.7 - 20 0.115 at VGS = - 2.5 V - 2.7 0.150 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9.0 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices

Contextual Info: SPICE Device Model Si1467DH www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs