SUF1002 Search Results

Contextual Info: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.)  High power and current handing capability  Lead free product is acquired

Contextual Info: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.)  High power and current handing capability  Lead free product is acquired

SUF1002

Contextual Info: SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=24mΩ(Typ.) VGS(th) : VGS(th)=1.0~3.0V

Contextual Info: Preliminary SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=30mΩ(Max.)

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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