STPR805DB Search Results

r810d

Contextual Info: STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor 8.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: STPR805DB thru STPR820DB Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR805DB STPR810DB STPR815DB STPR820DB VRRM V 50 100 150 200 VRMS V 35 70 105 140 Symbol Dim. VDC V 50 100 150

STPR805DB

Abstract: STPR820DB
Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Reverse Leakage Current

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: STPR805DB thru STPR820DB Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR805DB STPR810DB STPR815DB STPR820DB VRRM V 50 100 150 200 VRMS V 35 70 105 140 Symbol Dim. VDC V 50 100 150

STPR805DB

Abstract: STPR820DB
Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak

Contextual Info: LITE ON POWER SEMICONDUCTOR STPR805DB thru 820DB REVERSE VOLTAGE - 50 to 200 Volts FORWARD CURRENT - 8.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS TO-220AC FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features G lass Passivated D ie Construction Diffused Junction TQ-220AC Lh S u p er-F ast Switching for High Efficiency High C urrent C apability and Low Forward V oltag e Drop -*| |«-M JT c

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: LITE-ON SEMICONDUCTOR STPR805DB thru 820DB REVERSE VOLTAGE - 50 to 200 Volts FORWARD CURRENT - 8.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS TO-220AC FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

STPR805DB

Abstract: STPR820DB
Contextual Info: STPR805DB - STPR820DB VISHAY 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

Contextual Info: STPR805DB - STPR820DB VISHAY 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER I[l IT E M Il pow eb seh co nw icto r/ Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: STPR805DB–STPR820DB Vishay Lite–On Power Semiconductor 8.0A Ultra–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: July 24, 2006 August 1, 2006 Discrete Semiconductor Marking Change DCS/PCN-1046 PCN #: PCN #: 1046 TITLE Improved Marking IMPACT NONE DESCRIPTION OF CHANGE Upgrade part marking to Laser marking from ink markings

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

mur2060

Abstract: MUR20100 MUR20100CT MUR3080 ultra fast recovery diodes STPR16*0CT MUR6020 MUR6020PT stpr10 STPR806D TO-247AC Package
Contextual Info: Fast Recovery Diodes Áûñòðîâîññòàíàâëèâàþùèåñÿ äèîäû Ultra Fast Recovery Diodes Tj=-40°C~+125°C, Tjm=+125°C V A Electrical Characteristics IR @ VR=VRRM IFSM VFmax @ IF 25°C 125°C A uA mA V A STPR502D 200 5 100 5 0.50 0.900