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stp9527 Abstract: P Channel Low Gate Charge 100A mosfet 100A Contextual Info: STP9527 P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STP9527 STP9527 -40V/-10 -40V/-8 P Channel Low Gate Charge 100A mosfet 100A	PDF
Contextual Info: STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STP9527 STP9527 -40V/-10 -40V/-8	PDF

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stp9527

Abstract: P Channel Low Gate Charge 100A mosfet 100A
Contextual Info: STP9527 P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

STP9527 STP9527 -40V/-10 -40V/-8 P Channel Low Gate Charge 100A mosfet 100A

PDF

Contextual Info: STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

STP9527 STP9527 -40V/-10 -40V/-8

PDF