STP4435 Search Results

STP4435 Datasheets Context Search

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P channel MOSFET 10A Abstract: STP4435A MOSFET 10A Contextual Info: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STP4435A STP4435A -30V/-9 -30V/-7 P channel MOSFET 10A MOSFET 10A	PDF
Contextual Info: STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STP4435 STP4435 -30V/-9 -30V/-7 packa2007,	PDF

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P channel MOSFET 10A

Abstract: STP4435A MOSFET 10A
Contextual Info: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

STP4435A STP4435A -30V/-9 -30V/-7 P channel MOSFET 10A MOSFET 10A

PDF

Contextual Info: STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

STP4435 STP4435 -30V/-9 -30V/-7 packa2007,

PDF