STH17 Search Results

Contextual Info: STH170N8F7-2, STP170N8F7 N-channel 80 V, 0.0029 Ω typ., 120 A, STripFET VII DeepGATE Power MOSFET in H²PAK-2 and TO-220 packages Datasheet — target specification Features TAB 2 Order codes VDS RDS on max. STH170N8F7-2 80 V 0.0036 Ω 120 A 200 W STP170N8F7

Contextual Info: STH17 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)

BFT97

Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages

Contextual Info: STP170N8F7 N-channel 80 V, 0.003 Ω typ., 120 A, STripFET VII DeepGATE Power MOSFET in TO-220 package Datasheet — production data Features Order code VDS RDS on max. STP170N8F7 80 V 0.0039 Ω TAB ID PTOT 120 A 250 W • Ultra low on-resistance • 100% avalanche tested

gaussmeter probe

Abstract: PSRI STB1X-0201 gaussmeter hall effect 5vdc
Contextual Info: 5100 Series Hall Effect Gauss / Tesla Meters The 5100 Series Hall effect portable gaussmeters represent the most recent design from the world leader in magnetic measuring equipment. This new design incorporates the use of digital signal processing technology