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    STGW60H65FB Search Results

    STGW60H65FB Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGW60H65FB
    		STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO247 Original PDF 16
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    STGW60H65FB Price and Stock

    STMicroelectronics

    STMicroelectronics STGW60H65FB

    IGBT TRENCH FS 650V 80A TO-247
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    STMicroelectronics STGW60H65FB 1
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    Future Electronics () STGW60H65FB Tube 15 Weeks 600
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    STMicroelectronics STGW60H65FB (HB)

    Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGW60H65FB
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    Newark STGW60H65FB (HB) Bulk 467 1
    • 1 $5.42
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    • 1000 $3.88
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    STGW60H65FB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF

    Contextual Info: STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF