STGW40H65FB Search Results
STGW40H65FB Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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STGW40H65FB |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 283W TO247 | Original | 20 |
STGW40H65FB Price and Stock
STMicroelectronics STGW40H65FBIGBT TRENCH FS 650V 80A TO-247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STGW40H65FB | Tube | 689 | 1 |
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STGW40H65FB | Bulk | 1 |
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STGW40H65FB | 1,156 |
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STGW40H65FB | 1,800 | 600 |
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STGW40H65FB | 2,100 | 15 Weeks | 600 |
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STGW40H65FB | 1,156 | 1 |
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STGW40H65FB | Tube | 15 Weeks | 600 |
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STGW40H65FB | 1 |
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STGW40H65FB | 1,780 |
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STGW40H65FB | 1,800 | 16 Weeks | 30 |
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STGW40H65FB | 16 Weeks | 30 |
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STMicroelectronics STGW40H65FB (TRENCH HB SERIES)Transistor, Igbt, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:283W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW40H65FB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STGW40H65FB (TRENCH HB SERIES) | Bulk | 1,066 | 1 |
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STGW40H65FB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V |
Original |
STGW40H65FB STGWT40H65FB O-247 DocID025171 | |
Contextual Info: STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • High speed switching series • Minimized tail current 3 2 1 TO-3PF |
Original |
STGW40H65FB, STGFW40H65FB, STGWT40H65FB O-247 DocID025171 | |
Contextual Info: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V |
Original |
STGW40H65FB STGWT40H65FB O-247 DocID025171 | |
GW40H65FB
Abstract: GWT40H65FB
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Original |
STGW40H65FB STGWT40H65FB O-247 DocID025171 GW40H65FB GWT40H65FB |