ST230 Search Results

Contextual Info: Bulletin I25162 rev. D 04/03 ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB A-PUK 410A Typical Applications DC motor controls Controlled DC power supplies

Contextual Info: Bulletin I25163 rev. C 03/03 ST230S SERIES Stud Version PHASE CONTROL THYRISTORS Features Center amplifying gate Hermetic metal case with ceramic insulator Also available with glass-metal seal up to 1200V 230A International standard case TO-209AB (TO-93)

ST230S Series

Abstract: ST230S TO93
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I25163/B ST230S SERIES PHASE CONTROL THYRISTORS Stud Version Features 230A Center amplifying gate Hermetic metal case with ceramic insulator

Contextual Info: Bulletin 125162/B International 1»r]Rectifier ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features C en ter am plifying gate M e tal case with ceram ic insulator In ternational standard case T 0 -2 0 0 A B A -P U K Typical Applications

MOSFET SOT-23

Abstract: ST2304
Contextual Info: ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

ST2300

Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

12V 30A 3 pin mosfet

Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

RA207

Abstract: Diode datasheet catalog ST230 RA200 RA202 RA205 ST200 RA208
Contextual Info: ONLINE CATALOG SWITCHCRAFT, INC. 5555 N. Elston Ave. Chicago, IL 60630 • FAX: 773 792-2129 www.switchcraft.com MOLDED CABLE ASSEMBLIES With Littel Plug Phone Plugs RA200 Termination Code: 15 ST200 Termination Code: 05 RA205 Termination Code: 13 ST230 Termination Code: 10

Contextual Info: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly

ST230S

Abstract: ST230SP
Contextual Info: ST230SPbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 230 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) RoHS • Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V)

Contextual Info: ST230SPbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 230 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) RoHS • Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V)

200AB

Abstract: ST230C
Contextual Info: Bulletin I25162 rev. B 01/94 ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 410A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB A-PUK TypicalApplications DC motor controls Controlled DC power supplies

MOSFET P channel SOT-23

Abstract: MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ST2305
Contextual Info: P Channel Enchancement Mode MOSFET ST2305 -3.5A DESCRIPTION The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

200AB

Abstract: ST230C
Contextual Info: Bulletin I25162 rev. D 04/03 ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB A-PUK 410A Typical Applications DC motor controls Controlled DC power supplies

ST2302

Abstract: SOT23 marking 6A ST230 ST2302SRG marking 54 sot23 12 mosfet sot23
Contextual Info: ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are

ST2306SRG

Abstract: MOSFET N SOT-23 Power MOSFET N-Channel sot-23 44m-ohm ST2306 32A marking sot-23 5A MARKING CODE SOT23 IDM-10
Contextual Info: ST2306SRG N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2306SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

ST230C

Contextual Info: ST230CPbF Series Vishay High Power Products Phase Control Thyristors Hockey PUK Version , 410 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) RoHS COMPLIANT • Lead (Pb)-free TO-200AB (A-PUK)

ST230C

Contextual Info: ST230CPbF Series Vishay High Power Products Phase Control Thyristors Hockey PUK Version , 410 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) RoHS COMPLIANT • Lead (Pb)-free TO-200AB (A-PUK)

STB6000

Abstract: STI5100 stv0299 STi5301-Mboard stv0299 application ST231 ST230 STI5301 SMARTCARD directv express card DVB
Contextual Info: STi5301 High-performance set-top box decoder DATA BRIEF DESCRIPTION The new MPEG-2 decoder from ST provides a step-change in performance for pay TV set-top boxes and digital video recorders. Delivering 1.33 GOPS of processing power through an ST230 VLIW CPU running at 333 MHz,

Contextual Info: Bulletin I25211 09/05 ST230SPbF SERIES Stud Version PHASE CONTROL THYRISTORS Features Center amplifying gate Hermetic metal case with ceramic insulator Also available with glass-metal seal up to 1200V International standard case TO-209AB (TO-93) 230A Compression Bonded Encapsulation for heavy duty

200AB

Abstract: ST230C C780a
Contextual Info: Bulletin I25162 rev. D 04/03 ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB A-PUK 410A Typical Applications DC motor controls Controlled DC power supplies

1000V 20A transistor

Abstract: thyristor TO-200AB 200AB ST230C TO200AB
Contextual Info: Bulletin I25162 rev. C 01/00 ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 410A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB A-PUK Typical Applications DC motor controls Controlled DC power supplies

Contextual Info: ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are