SSP3N70 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001733^ T3T «SIIGK N-CHANNEL POW ER M O SFETS SSP3N70 SSH3N70 FEATURES • • • • • • • Low er Ros ON Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lys ilico n g a te ce ll s tru c tu re

SSP3N80

Abstract: CM 502 SSP3N70 MOSFET 30A 700V
Contextual Info: N-CHANNEL POWER MOSFETS SSP3N80/70 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

SSP6N60

Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
Contextual Info: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125

SSM10N06

Abstract: SSM10N10 SSM10N70 SSM10N70A SSM12N06 SSM12N08 SSM12N10 SSM15N55 SSM15N55A SSM15N60
Contextual Info: - 312 - ft 1Sü s tt € * Vd s or £ Vg s V % (13=25*0) Ig s s Pd Id Vg s I dss th) ft '14 Ds(on) Vds = (Ta=25°C) g fs I d (o o ) Ciss Coss Crss (*typ) (*typ) (*typ) (V) * /CH * /CH (A) m Vg s (nA) (V) min max (V) (V) Vd s (MA) (V) (max) (max) (max) Vd s

ssp12n10

Abstract: SSP6N60 SSS4N60 SSP5N40 SSP3N70A SSP4N45 SSP4N50 SSP4N55 SSP4N60 SSP4N70
Contextual Info: - 313 - f £ ít ft ^ ; £ Vd s or Vd g € ]/ V) Vg s (V) ÍS (Ta=25'C) Ig s s Id Pd * /CH * /CH (W) (A) V g s th) Id s s (nA) Vg s (V) (|í A) Vd s (V) (V) (V) F d s (on) Vd s = Vg s Id <mA) tí (Ta=25°C) Mon) Ciss g fs Coss Crss ft & m n V g s =0 (max)