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    SSM6N57NU Search Results

    SSM6N57NU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSM6N57NU,LF
    		Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET N CH DUAL 30V 4A UDFN6 Original PDF 5
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    SSM6N57NU Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components SSM6N57NU,LF

    MOSFET 2N-CH 30V 4A 6DFN
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    DigiKey () SSM6N57NU,LF Digi-Reel 49,404 1
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    SSM6N57NU,LF Cut Tape 49,404 1
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    SSM6N57NU,LF Reel 48,000 3,000
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    Avnet Americas SSM6N57NU,LF Reel 12 Weeks 3,000
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    Mouser Electronics SSM6N57NU,LF 8,575
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    Verical SSM6N57NU,LF 2,777 57
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    Arrow Electronics SSM6N57NU,LF Cut Strips 2,777 12 Weeks 1
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    Toshiba America Electronic Components SSM6N57NU,LF(T

    Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R
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    Verical SSM6N57NU,LF(T 3,000 156
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    Newark SSM6N57NU,LF(T Cut Tape 3,045 1
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    Chip One Stop SSM6N57NU,LF(T Cut Tape 3,000 0 Weeks, 1 Days 5
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    EBV Elektronik SSM6N57NU,LF(T 3,000 15 Weeks 3,000
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    Toshiba America Electronic Components SSM6N57NU,LF(B

    Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP
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    Verical SSM6N57NU,LF(B 1,582 209
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    Quest Components SSM6N57NU,LF(B 1,265
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    SSM6N57NU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM6N57NU PDF

    Contextual Info: SSM6N57NU New product Small-signal MOSFET 2 in 1 Description Properties Document Inquiries on our product Description Polarity N-chx2 Internal Connection Independent RoHS Compatible Product s (#) Assembly bases Available Japan,Malaysia Properties Package Information


    Original     		SSM6N57NU SSM6N55NU oduct/transistor/selection/topics/1264313 PDF

    22-Y-1

    Abstract: SSM6N57NU
    Contextual Info: SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM6N57NU 22-Y-1 SSM6N57NU PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF