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    SSM3K56MFV Search Results

    SSM3K56MFV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSM3K56MFV,L3F
    		Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 0.8A VESM Original PDF 201.33KB
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    SSM3K56MFV Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components SSM3K56MFV,L3F

    MOSFET N-CH 20V 800MA VESM
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    DigiKey () SSM3K56MFV,L3F Cut Tape 51,845 1
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    SSM3K56MFV,L3F Digi-Reel 51,845 1
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    SSM3K56MFV,L3F Reel 48,000 8,000
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    Avnet Americas SSM3K56MFV,L3F Reel 12 Weeks 8,000
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    Mouser Electronics SSM3K56MFV,L3F 83,436
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    Verical SSM3K56MFV,L3F 4,913 1,389
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    Arrow Electronics SSM3K56MFV,L3F Cut Strips 4,913 12 Weeks 1,389
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    TTI SSM3K56MFV,L3F Reel 8,000
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    Toshiba America Electronic Components SSM3K56MFV,L3F(B

    Trans MOSFET N-CH Si 20V 0.8A 3-Pin VESM
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    Verical SSM3K56MFV,L3F(B 7,222 642
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    Avnet Asia SSM3K56MFV,L3F(B 24 Weeks 8,000
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    Toshiba America Electronic Components SSM3K56MFV,L3F(T

    Mosfet, N-Ch, 20V, 0.8A, Sot-723 Rohs Compliant: Yes |Toshiba SSM3K56MFV, L3F(T
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    Newark () SSM3K56MFV,L3F(T Reel 24,000 8,000
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    SSM3K56MFV,L3F(T Cut Tape 7,920 5
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    EBV Elektronik SSM3K56MFV,L3F(T 15 Weeks 8,000
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    Toshiba America Electronic Components SSM3K56MFV

    MOSFETs Silicon N-Channel MOS
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    Win Source Electronics SSM3K56MFV 106,000
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    SSM3K56MFV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSM3K56MFV MOSFETs Silicon N-Channel MOS SSM3K56MFV 1. Applications • High-Speed Switching 2. Features 1 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM3K56MFV PDF

    SSM3K56MFV

    Contextual Info: SSM3K56MFV MOSFETs Silicon N-Channel MOS SSM3K56MFV 1. Applications • High-Speed Switching 2. Features 1 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM3K56MFV SSM3K56MFV PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF