SSM3K01 Search Results

SSM3K01F

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

Contextual Info: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01F HIGH SPEED SWITCHING APPLICATIONS U nit in mm • Sm all Package • Low on Resistance Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V) • Low Gate Threshold Voltage

SSM3K01T

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V

SSM3K01T

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

SSM3K01F

Contextual Info: SSM3K01F 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K01F ○ 高速スイッチング用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V)

SSM3K01

Abstract: marking dC
Contextual Info: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm • Small Package • Low on Resistance Ron = 120mH Max (VGS = 4V) Ron = 150mH (Max) (VGS = 2.5V) • Low Gate Threshold Voltage

SSM3K01T

Contextual Info: SSM3K01T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K01T ○ 高速スイッチング用 • • • 単位: mm 小型パッケージで高密度実装に最適 オン抵抗が低い。 : Ron = 120 mΩ 最大 (＠VGS = 4 V)

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications • Small package • Low on resistance : Ron = 120 m : Ron = 150 m • Unit: mm max (VGS = 4 V) (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

SSM3K01F

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) · Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

SSM3K01T

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit in mm • • • Small Package Low on Resistance : Ron = 120 mΩ max (＠VGS = 4 V) : Ron = 150 mΩ (max) (＠VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (＠VDS = 3 V, ID = 0.1 mA)

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit in mm • • • Small Package Low on Resistance : Ron = 120 mΩ max (＠VGS = 4 V) : Ron = 150 mΩ (max) (＠VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (＠VDS = 3 V, ID = 0.1 mA)

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

SSM3K01

Abstract: SSM3K01F
Contextual Info: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 2.5-0.3 • Small Package • Low on Resistance + 0.25 1.5-0.15 Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ