SSF23 Search Results

marking 2341E

Abstract: 2341E SSF2341E
Contextual Info: SSF2341E DESCRIPTION The SSF2341E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V

SOT23

Abstract: SSF2301A 2301A
Contextual Info: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES

Contextual Info: SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES

Mosfet

Abstract: SSF2312
Contextual Info: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

Contextual Info: SSF230 2 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G

Contextual Info: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES

Mosfet

Abstract: SSF2314
Contextual Info: SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application.

Contextual Info: SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. G

"battery protection"

Abstract: SOT23-3
Contextual Info: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G

SSF2300A

Abstract: "battery protection"
Contextual Info: SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G

SSF2336

Abstract: "battery protection"
Contextual Info: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S

SSF2316E

Abstract: DFN3×3-8L 2316E "battery protection"
Contextual Info: SSF2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired

SSF2306

Abstract: "battery protection" D2306
Contextual Info: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V

"battery protection"

Contextual Info: SSF2334 D DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S

Mosfet

Abstract: SSF2305
Contextual Info: SSF2305 20V P-Channel MOSFET D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications.

Mosfet

Abstract: SSF2301A
Contextual Info: SSF2301A 20V P-Channel MOSFET D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G

Contextual Info: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

SSF2301

Abstract: 2301 marking sot-23
Contextual Info: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

SOT23

Abstract: SSF2301B 2301B
Contextual Info: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES

Mosfet

Abstract: SSF2300B
Contextual Info: SSF2300B 20V N-Channel MOSFET DESCRIPTION D The SSF2300B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

Mosfet

Abstract: SSF2316E
Contextual Info: SSF2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability

Contextual Info: SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G

Mosfet

Abstract: SSF2306
Contextual Info: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V