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    SSF23 Search Results

    SSF23 Datasheets (10)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSF2300
    		Good-Ark Semiconductor MOSFET, N-CH, SINGLE, 4.5A, 20V, Original PDF 683.71KB 6
    SSF2311S
    		Good-Ark Semiconductor MOSFET, P-CH, SINGLE, -4.7A, -20 Original PDF 887.26KB 5
    SSF2314
    		Good-Ark Semiconductor MOSFET, N-CH, SINGLE, 4.5A, 20V, Original PDF 554.62KB 5
    SSF2318E
    		Good-Ark Semiconductor MOSFET, N-CH, SINGLE, 6.5A, 20V, Original PDF 614.14KB 4
    SSF2319CJ1
    		Good-Ark Semiconductor MOSFET, P-CH, SINGLE, -0.45A, -2 Original PDF 1.09MB 6
    SSF2320Y
    		Good-Ark Semiconductor MOSFET, N-CH, SINGLE, 0.8A, 20V, Original PDF 1.13MB 5
    SSF2341E
    		Good-Ark Semiconductor MOSFET, P-CH, SINGLE, -4A, -20V, Original PDF 915KB 7
    SSF23X100
    		Cynergy3 Components Accessories, Sensors, Transducers, FLOATSWITCH M16 VERT SS Original PDF 1
    SSF23XPM12
    		Cynergy 3 Sensors, Transducers - Float, Level Sensors - FLOATSWITCH M16 VERT SS Original PDF 1.11MB
    badge SSF2341E
    		VBsemi Electronics Co Ltd P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, featuring trench technology and optimized for load switches, PA switches, and DC/DC converters. Original PDF
    SF Impression Pixel

    SSF23 Price and Stock

    Suzhou Good-Ark Electronics Co Ltd

    Suzhou Good-Ark Electronics Co Ltd SSF2318E

    MOSFET, N-CH, SINGLE, 6.5A, 20V,
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    DigiKey () SSF2318E Digi-Reel 22,457 1
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    SSF2318E Cut Tape 22,457 1
    • 1 $0.13
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    SSF2318E Tape & Reel 21,000 3,000
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    Suzhou Good-Ark Electronics Co Ltd SSF2319GE

    MOSFET, P-CH, SINGLE, -0.40A, -2
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    DigiKey () SSF2319GE Digi-Reel 15,950 1
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    SSF2319GE Cut Tape 15,950 1
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    SSF2319GE Tape & Reel 8,000 8,000
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    Suzhou Good-Ark Electronics Co Ltd SSF2300

    MOSFET, N-CH, SINGLE, 4.5A, 20V,
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    DigiKey () SSF2300 Cut Tape 14,359 1
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    SSF2300 Digi-Reel 14,359 1
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    Bristol Electronics SSF2300 5
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    Suzhou Good-Ark Electronics Co Ltd SSF2314

    MOSFET, N-CH, SINGLE, 4.5A, 20V,
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    DigiKey () SSF2314 Digi-Reel 6,000 1
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    SSF2314 Cut Tape 6,000 1
    • 1 $0.14
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    • 100 $0.07
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    SSF2314 Tape & Reel 6,000 3,000
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    Suzhou Good-Ark Electronics Co Ltd SSF2311S

    MOSFET, P-CH, SINGLE, -4.7A, -20
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    DigiKey () SSF2311S Cut Tape 5,587 1
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    SSF2311S Digi-Reel 5,587 1
    • 1 $0.12
    • 10 $0.08
    • 100 $0.06
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    SSF2311S Tape & Reel 3,000 3,000
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    • 10000 $0.04
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    Find more SSF23 price and stock on Findchips.com

    SSF23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking 2341E

    Abstract: 2341E SSF2341E
    Contextual Info: SSF2341E DESCRIPTION The SSF2341E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V


    Original     		SSF2341E SSF2341E Rating3000V OT-23 2341E OT-23 330mm marking 2341E 2341E PDF

    SOT23

    Abstract: SSF2301A 2301A
    Contextual Info: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES


    Original     		SSF2301A SSF2301A SOT23 2301A PDF

    Contextual Info: SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES


    Original     		GDSSF2305 SSF2305 SSF2305 OT-23 950TYP 550REF PDF

    Mosfet

    Abstract: SSF2312
    Contextual Info: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching


    Original     		SSF2312 SSF2312 OT-23 950TYP 550REF Mosfet PDF

    Contextual Info: SSF230 2 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		GDSSF230 SSF2302 OT-23 950TYP 550REF PDF

    Contextual Info: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES


    Original     		GDSSF2301A SSF2301A SSF2301A ABSOT-23 950TYP 550REF PDF

    Mosfet

    Abstract: SSF2314
    Contextual Info: SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application.


    Original     		SSF2314 SSF2314 OT-23 950TYP 550REF Mosfet PDF

    Contextual Info: SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		GDSSF2314 SSF2314 OT-23 QuSOT-23 950TYP 550REF PDF

    "battery protection"

    Abstract: SOT23-3
    Contextual Info: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		SSF2300B SSF2300B OT23-3 2300B SSF2300Brameters) "battery protection" SOT23-3 PDF

    SSF2300A

    Abstract: "battery protection"
    Contextual Info: SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		SSF2300A SSF2300A OT-23 "battery protection" PDF

    SSF2336

    Abstract: "battery protection"
    Contextual Info: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S


    Original     		SSF2336 SSF2336 OT-23 "battery protection" PDF

    SSF2316E

    Abstract: DFN3×3-8L 2316E "battery protection"
    Contextual Info: SSF2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired


    Original     		SSF2316E Rating2000V 2316E 25unless SSF2316E DFN3×3-8L 2316E "battery protection" PDF

    SSF2306

    Abstract: "battery protection" D2306
    Contextual Info: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V


    Original     		SSF2306 SSF2306 OT-23 OT-23 180mm "battery protection" D2306 PDF

    "battery protection"

    Contextual Info: SSF2334 D DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S


    Original     		SSF2334 SSF2334 OT-23 "battery protection" PDF

    Mosfet

    Abstract: SSF2305
    Contextual Info: SSF2305 20V P-Channel MOSFET D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications.


    Original     		SSF2305 SSF2305 OT-23 950TYP 550REF Mosfet PDF

    Mosfet

    Abstract: SSF2301A
    Contextual Info: SSF2301A 20V P-Channel MOSFET D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.


    Original     		SSF2301A SSF2301A OT-23 950TYP 550REF Mosfet PDF

    Contextual Info: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		GDSSF2336 SSF2336 OT-23 QuantSOT-23 950TYP 550REF PDF

    Contextual Info: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.


    Original     		GDSSF2300B SSF2300B OT23-3 OT23-3 PDF

    SSF2301

    Abstract: 2301 marking sot-23
    Contextual Info: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram


    Original     		SSF2301 SSF2301 2301 marking sot-23 PDF

    SOT23

    Abstract: SSF2301B 2301B
    Contextual Info: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES


    Original     		SSF2301B SSF2301B 2301B 180mrameters) SOT23 2301B PDF

    Mosfet

    Abstract: SSF2300B
    Contextual Info: SSF2300B 20V N-Channel MOSFET DESCRIPTION D The SSF2300B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching


    Original     		SSF2300B SSF2300B OT23-3 Mosfet PDF

    Mosfet

    Abstract: SSF2316E
    Contextual Info: SSF2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability


    Original     		SSF2316E 2316E 65BSC Mosfet SSF2316E PDF

    Contextual Info: SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G


    Original     		GDSSF2300 SSF2300 OT-23 QuantitT-23 950TYP 550REF PDF

    Mosfet

    Abstract: SSF2306
    Contextual Info: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V


    Original     		SSF2306 SSF2306 OT-23 SSF23 950TYP 550REF Mosfet PDF