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    SS367 Datasheets (2)

    Vishay Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SS36-7001HE3_A/I
    		Vishay Semiconductors DIODE SCHOTTKY 60V 3A SMD Original PDF 92.15KB
    SS36-7001HE3_B/I
    		Vishay Semiconductors DIODE SCHOTTKY 60V 3A DO214AB Original PDF 92.15KB
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    SS367 Price and Stock

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    Toshiba America Electronic Components 1SS367,H3F

    - Tape and Reel (Alt: 1SS367,H3F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS367,H3F Tape & Reel 24 Weeks 3,000
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    TTI 1SS367,H3F Reel 3,000
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    • 10000 $0.02
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    Toshiba America Electronic Components 1SS367TPH3F

    Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R - Tape and Reel (Alt: 1SS367TPH3F)
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    Avnet Americas 1SS367TPH3F Tape & Reel 40 Weeks 3,000
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    Toshiba America Electronic Components 1SS367,H3F(T

    Schottky Diode, 15V, 0.1A, Sod-323; |Toshiba 1SS367,H3F(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () 1SS367,H3F(T Cut Tape 48,390 1
    • 1 $0.14
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    • 100 $0.07
    • 1000 $0.04
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    1SS367,H3F(T Tape & Reel 48,390 100
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    • 100 $0.07
    • 1000 $0.04
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    1SS367,H3F(T Tape & Reel 3,000
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    TME 1SS367,H3F(T 8,550 20
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    Avnet Asia 1SS367,H3F(T 28 Weeks 3,000
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    EBV Elektronik 1SS367,H3F(T 24,000 22 Weeks 3,000
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    Quantum Storage Systems WS-SS36-7S

    Wall System 36X74 W- Baskets Dividers An; |Quantum Storage WS-SS36-7S
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    Newark WS-SS36-7S Bulk 1
    • 1 $5554.65
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    • 100 $5554.65
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    Quantum Storage Systems WS70-SS36-7S

    Storage Cart, Mobile, 7 Bins; |Quantum Storage WS70-SS36-7S
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    Newark WS70-SS36-7S Bulk 1
    • 1 $4098.49
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    • 100 $4098.49
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    SS367 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1SS367

    Abstract: marking OE MARKING L toshiba USC
    Contextual Info: SS367 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Low Forward Voltage : Vjn = 0.23V TYP. Unit in mm + 0.2 1.2 5 - 0. )Ijr = 5mA M. oo M A X IM U M RATINGS (Ta = 25°C) 4- i


    OCR Scan     		1ss367marking oemarking l toshiba usc PDF

    Contextual Info: SS367 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION • • 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse


    OCR Scan     		1ss367ss367hv100 PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p PDF