SQJ968EP Search Results
SQJ968EP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJ968EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 60V POWERPAK SO8 | Original | 212.77KB |
SQJ968EP Price and Stock
Vishay Siliconix SQJ968EP-T1_GE3MOSFET 2N-CH 60V 23.5A PPAK SO8 |
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SQJ968EP-T1_GE3 | Cut Tape | 4,454 | 1 |
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SQJ968EP-T1_GE3 | 3,000 | 1 |
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Vishay Intertechnologies SQJ968EP-T1_GE3Transistor MOSFET Array Dual N-CH 60V 23.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ968EP-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ968EP-T1_GE3 | Reel | 19 Weeks | 3,000 |
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SQJ968EP-T1_GE3 | 28,113 |
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SQJ968EP-T1_GE3 | Reel | 3,000 |
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SQJ968EP-T1_GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SQJ968EP-T1_GE3 (TRENCHFET SERIES)Mosfet, Dual N-Ch, 60V, Powerpak So Rohs Compliant: Yes |Vishay SQJ968EP-T1_GE3 |
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SQJ968EP-T1_GE3 (TRENCHFET SERIES) | Cut Tape | 5,923 | 1 |
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Vishay Intertechnologies SQJ968EP-T1-GE3MOSFETs PPAKSO8 2NCH 60V 23.5A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ968EP-T1-GE3 | Reel | 9,000 | 3,000 |
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SQJ968EP-T1-GE3 | 26 Weeks | 3,000 |
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Vishay Intertechnologies SQJ968EPT1GE3AUTOMOTIVE DUAL N-CHANNEL 60 V (D-S) 175 DEGREE CELSIUS MOSFET Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ968EPT1GE3 | 50,895 |
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SQJ968EP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.0336 RDS(on) () at VGS = 4.5 V |
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SQJ968EP AEC-Q101 SQJ968EP-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQJ968EP_RCContextual Info: SQJ968EP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ968EP AN609, 8920m 7938u 2179m 8758u 1708m 3257m 2495m 01-Feb-13 SQJ968EP_RC | |
Contextual Info: SPICE Device Model SQJ968EP www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ968EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |