SQ4435EY Search Results
SQ4435EY Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQ4435EY-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 15A 8SOIC | Original | 201.8KB | |||
SQ4435EY-T1_BE3 | Vishay Siliconix | MOSFET P-CHANNEL 30V 15A 8SOIC | Original | 200.83KB | 9 |
SQ4435EY Price and Stock
Vishay Siliconix SQ4435EY-T1_BE3MOSFET P-CHANNEL 30V 15A 8SOIC |
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SQ4435EY-T1_BE3 | Cut Tape | 2,494 | 1 |
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Vishay Siliconix SQ4435EY-T1_GE3MOSFET P-CHANNEL 30V 15A 8SOIC |
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SQ4435EY-T1_GE3 | Digi-Reel | 2,144 | 1 |
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Vishay Intertechnologies SQ4435EY-T1_BE3Transistor MOSFET P-Channel 30V 15A 8-Pin SOIC T/R - Tape and Reel (Alt: SQ4435EY-T1_BE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ4435EY-T1_BE3 | Reel | 19 Weeks | 2,500 |
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SQ4435EY-T1_BE3 | 2,435 |
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Vishay Intertechnologies SQ4435EY-T1_GE3P-CHANNEL 30-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQ4435EY-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ4435EY-T1_GE3 | Reel | 19 Weeks | 2,500 |
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SQ4435EY-T1_GE3 | 11,125 |
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SQ4435EY-T1_GE3 | 20 Weeks | 2,500 |
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Vishay Intertechnologies SQ4435EY-T1_BE3 (TRENCHFET SERIES)Mosfet, P-Ch, 30V, 15A, Soic; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SQ4435EY-T1_BE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ4435EY-T1_BE3 (TRENCHFET SERIES) | Reel | 2,500 |
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Buy Now |
SQ4435EY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQ4435EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.018 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • AEC-Q101 Qualifiedc - 15 Configuration • 100 % Rg and UIS Tested |
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SQ4435EY AEC-Q101 2002/95/EC SQ4435EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ4435EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQ4435EY AN609, 0196u 5029u 2915m 2374m 6293m 2851m 3062u 21-Apr-11 | |
Contextual Info: SQ4435EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.018 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • AEC-Q101 Qualifiedc - 15 Configuration • 100 % Rg and UIS Tested |
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SQ4435EY AEC-Q101 2002/95/EC SQ4435EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SQ4435EY
Abstract: SQ4435E sq4435
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SQ4435EY AEC-Q101 2002/95/EC SQ4435EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ4435EY SQ4435E sq4435 | |
SQ4435EContextual Info: SQ4435EY Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC |
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SQ4435EY AEC-Q101 2002/95/EC SQ4435EY-T1-GE3 11-Mar-11 SQ4435E | |
SQ4435EContextual Info: SQ4435EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.018 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • AEC-Q101 Qualifiedc - 15 Configuration • 100 % Rg and UIS Tested |
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SQ4435EY AEC-Q101 2002/95/EC SQ4435EY-T1-GE3 11-Mar-11 SQ4435E | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |