SQ2389ES Search Results
SQ2389ES Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQ2389ES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V SO23 | Original | 275.33KB |
SQ2389ES Price and Stock
Vishay Intertechnologies SQ2389ES-T1_BE3Transistor MOSFET P-Channel 40V 4.1A Automotive 3-Pin SOT-23 - Tape and Reel (Alt: SQ2389ES-T1_BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2389ES-T1_BE3 | Tape & Reel | 6,000 | 3,000 |
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Vishay Intertechnologies SQ2389ES-T1_GE3Mosfet, Auto, P-Ch, 60V, 2.3A, Sot-23; Available Until Stocks Are Exhausted |Vishay SQ2389ES-T1_GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2389ES-T1_GE3 | Cut Tape | 57,980 | 1 |
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| SQ2389ES-T1_GE3 | Tape & Reel | 57,980 | 100 |
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SQ2389ES-T1_GE3 | 2,689 |
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| SQ2389ES-T1_GE3 | 22 | 1 |
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SQ2389ES-T1_GE3 | 2,551 |
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| SQ2389ES-T1_GE3 | 17 |
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SQ2389ES-T1_GE3 | 8 | 1 |
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Vishay Intertechnologies SQ2389ES-T1-BE3MOSFETs SOT23 P-CH 40V 4.1A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2389ES-T1-BE3 | Reel | 3,000 |
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Vishay Intertechnologies SQ2389ES-T1-GE3MOSFETs SOT23 P-CH 40V 4.1A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2389ES-T1-GE3 | Reel | 3,000 |
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SQ2389ES-T1-GE3 | 312 |
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| SQ2389ES-T1-GE3 | 312 |
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SQ2389ES-T1-GE3 | 27,000 |
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Vishay Intertechnologies SQ2389EST1GE3AUTOMOTIVE P-CHANNEL 40 V (D-S) 175 DEGREE CELSIUS MOSFET Power Field-Effect Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2389EST1GE3 | 56,975 |
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SQ2389ES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SQ2389ES www.vishay.com Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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sq2389es2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SQ2389ES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sq2389esan6093018u8484m+5 | |
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Contextual Info: SQ2389ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -40 RDS(on) (Ω) at VGS = -10 V 0.094 RDS(on) (Ω) at VGS = -4.5 V 0.188 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested |
Original |
sq2389esaec-q101ot-23o-236+4 |