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    SQ2389ES Search Results

    SQ2389ES Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SQ2389ES-T1_GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V SO23 Original PDF 275.33KB
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    SQ2389ES Price and Stock

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    Vishay Siliconix SQ2389ES-T1_BE3

    MOSFET P-CH 40V 4.1A SOT23-3
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    DigiKey () SQ2389ES-T1_BE3 Cut Tape 28,062 1
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    SQ2389ES-T1_BE3 Digi-Reel 28,062 1
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    SQ2389ES-T1_BE3 Reel 27,000 3,000
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    Vishay Siliconix SQ2389ES-T1_GE3

    MOSFET P-CH 40V 4.1A SOT23-3
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    DigiKey () SQ2389ES-T1_GE3 Digi-Reel 7,200 1
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    SQ2389ES-T1_GE3 Cut Tape 7,200 1
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    SQ2389ES-T1_GE3 Reel 6,000 3,000
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    New Advantage Corporation SQ2389ES-T1_GE3 3,000 1
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    Vishay Intertechnologies SQ2389ES-T1_BE3

    Transistor MOSFET P-Channel 40V 4.1A Automotive 3-Pin SOT-23 - Tape and Reel (Alt: SQ2389ES-T1_BE3)
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    Avnet Americas SQ2389ES-T1_BE3 Reel 6,000 3,000
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    Mouser Electronics SQ2389ES-T1_BE3 482,551
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    Vyrian SQ2389ES-T1_BE3 97,208
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    Vishay Intertechnologies SQ2389ES-T1_GE3

    P-CHANNEL 40-V (D-S) 175C MOSFET - Product that comes on tape, but is not reeled (Alt: 96Y9640)
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    Avnet Americas () SQ2389ES-T1_GE3 Ammo Pack 1
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    SQ2389ES-T1_GE3 Reel 3,000
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    Mouser Electronics SQ2389ES-T1_GE3 24,054
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    Verical () SQ2389ES-T1_GE3 6,796 293
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    SQ2389ES-T1_GE3 570 27
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    Arrow Electronics SQ2389ES-T1_GE3 Cut Strips 545 15 Weeks 1
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    Bristol Electronics SQ2389ES-T1_GE3 2,689
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    Quest Components () SQ2389ES-T1_GE3 2,551
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    SQ2389ES-T1_GE3 17
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    TME SQ2389ES-T1_GE3 2,003 1
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    Karl Kruse GmbH & Co KG SQ2389ES-T1_GE3 6,000
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    Chip Stock SQ2389ES-T1_GE3 264,500
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    Vyrian SQ2389ES-T1_GE3 36,086
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    Vishay Intertechnologies SQ2389ES-T1_GE3 (TRENCHFET)

    Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2389ES-T1_GE3
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    Newark SQ2389ES-T1_GE3 (TRENCHFET) Cut Tape 6,796 1
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    SQ2389ES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SQ2389ES www.vishay.com Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SQ2389ES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ2389ES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SQ2389ES AN609, 3018u 8484m 2622m 8030m 5907m 4038m 03-Feb-15 PDF

    Contextual Info: SQ2389ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -40 RDS(on) (Ω) at VGS = -10 V 0.094 RDS(on) (Ω) at VGS = -4.5 V 0.188 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested


    Original     		SQ2389ES AEC-Q101 OT-23 O-236) SQ2389ES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF