SPU09N05 Search Results

SPU09N05 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPU09N05		Infineon Technologies	SIPMOS PowerTransistor	Original	PDF	139.08KB	8
SPU09N05		Infineon Technologies	SIPMOS Power Transistor	Original	PDF	216.86KB	9
SPU09N05		Siemens		Original	PDF	1.09MB	7
SPU09N05		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

SPU09N05 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SPD09N05 Abstract: P-TO252 SPU09N05 spd09n Contextual Info: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .	Original	spd09n05 spu09n05 p-to252 q67000-+3p-to251 16/oct/1997 spd09n	PDF
09N05 Contextual Info: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature	Original	09n05 spd09n05 spu09n05 p-to252 +3p-to251 q67040-s4136-a2 q67040-s4130-a2	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615nv bsp318s buz mosfet mosfet buz 326 +8buz mosfet 334 spd14n05 mosfet buz 349 mosfet buz 90a buz 100 mosfet bup202 buz mosfet 102s buz mosfet 111s	PDF
SPD09N05 Abstract: P-TO252 Q67040-S4130-A2 SPU09N05 Contextual Info: SPD09N05 SIPMOS  Power Transistor Features Product Summary • N channel Drain source voltage VDS Drain-Source on-state resistance RDS on 0.115 Ω Continuous drain current ID • Enhancement mode • Avalanche rated 55 V 9.2 A • dv/dt rated •=175°C operating temperature	Original	spd09n05 p-to252 q67040-s4136-a2 spu09n05 +2p-to251 q67040-s4130-a2	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615nv ot-223 20iemens b152-h6493-g5-x-7600 +10buz mosfet mosfet buz 326 bup 312 bss 130 bup 304 bup 313 615n60 buz 840 sgu06n60 bup 307d	PDF
09n05 Abstract: SPD09N05 P-TO252 Q67040-S4130-A2 Q67040-S4136 SPU09N05 Contextual Info: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature	Original	09n05 spd09n05 p-to252 q67040-s4136 +3p-to251 spu09n05 q67040-s4130-a2	PDF