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SPN2302D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SPN2302DS23RG Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23 Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	SPN2302D SPN2302D SPN2302DS23RG marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23	PDF
SPN2302DS23RG Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	SPN2302D SPN2302D SPN2302DS23RG	PDF

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SPN2302DS23RG

Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23
Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

Original

SPN2302D SPN2302D SPN2302DS23RG marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23

PDF

SPN2302DS23RG

Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

Original

SPN2302D SPN2302D SPN2302DS23RG

PDF