sgsp564
Abstract: SEF331
Contextual Info: S G S-THONSON 07E D | 712^537 0 0 1 7 ^ 3 7 73C 1 7 4 9 0 ï" î D U ì fe l "à N-CHANNELPOWER MOSTRANSISTORS 3 : ’ r i ' HIGH SPEED S W ITC H IN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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sef330sef331sef332sef333+3sef330/sef331sef332/sef333sgsp564
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st C212 diode
Abstract: C2099 SEF323 SEF321
Contextual Info: S G S-THOMSON 0 7 E D g 7^2^537 O Q l ? ^ 73C 1 7 4 8 6 D T - 3 9-f/ ë \\ LA f-X\ p . N-CHANNELPOWER MOSTRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.
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sef323i00v/350v300nssgsp564+8c-211sef32qsef322sef323e--09st c212 diodec2099sef321
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sgsp365
Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
Contextual Info: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area
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sgsp364/p365/p366sgsp464/p465/p46650v/400vsgsp366+15sp364sp365sp464sp465sp564sp565sgsp365sgsp465p466sgsp466sgsp464sgsp564s 566 bp565sgsp566
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