SGSD311FI Search Results

Contextual Info: SGSD311FI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)28 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2m¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

TO3 package RthJC

Abstract: SGS-Thomson d 311 TO218 20A Darlington SGSD310 SGSD311 SGSD311FI ISOWATT218 O-20-A
Contextual Info: _ • / I T A 7# 7 ^ 5 3 7 0Q Eqi35 S G S -T H O M S O N liffln o ^ m iO T O iilo i S < i S-THOMSON T ■ * " ' P 3 3 - 2 i \ _ S G S D 3 1 0 / 3 1 1 /3 1 1 FI 3QE D HIGH VOLTAGE, HIGH POWER, FAST SWITCHING D ESC RIPTIO N The SGSD310, SGSD311 and SGSD311FI are

Contextual Info: r r 7 SGS-THOMSON 7# ^ M t e iM L iO T O iQ O S 310 / 311/311 SGSD FI HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESCRIPTION The SGSD310, SGSD311 and SGSD311FI are silicon multiepitaxial planar NPN transistors in monolithic Darlington configuration with integrated

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047