SEMIX151GAL12E4S Search Results

SEMIX151GAL12E4S Price and Stock

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SEMIKRON


SEMIKRON SEMIX151GAL12E4S Igbt Module, Npn, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX151GAL12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX151GAL12E4S	Bulk			8	1 - 10 $68.80 100 $63.03 1000 $63.03 10000 $63.03	Buy Now
RS	SEMIX151GAL12E4S	Bulk			1	1 $534.05 10 $480.64 100 $480.64 1000 $480.64 10000 $480.64	Get Quote
SEMIKRON SEMIX151GAL12E4S 27890102 Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX151GAL12E4S 27890102				1	1 $213.75 10 $156.83 100 $146.37 1000 $146.37 10000 $146.37	Get Quote

SEMIX151GAL12E4S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SEMiX151GAL12E4s Abstract: semix1 Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAL12E4s E63532 dEMiX151GAL12E4s SEMiX151GAL12E4s semix1	PDF
Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAL12E4s E63532	PDF
Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAL12E4s SEMiX151GAL12E4s	PDF
Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX151GAL12E4s E63532	PDF
Contextual Info: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAL12E4s E63532	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF