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    12n08

    Abstract: 12N10
    Contextual Info: E l s G S-THOMSON 07E D | 7^2^537 0010104 0 7 3 C 1 76 01 •ï 3 5 !- i \ . SEFM12N08 SEFM12N10 SEFPI2H08 SEFP12N10 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS •gm Pfot T"stg Ti - il N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate


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    sefm12n08sefm12n10sefpi2h08sefp12n10+520ksi12n1012n08sgsp361c-326 PDF