SD1201 Search Results

B041

Abstract: lju sot23
Contextual Info: TELEDYNE COMPONENTS 5öE D • ÖT17^02 ÜÜ0b4ai 5 _ * l SD1200, SD1201 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION SD1200CHP Sorted Chip* In Conductive Waffle Pack TO-226AA TO-92 Packags TO-206AA (TO-18) Package

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

Contextual Info: 6 5 4 3 2 1 E E D D C C B B GENERAL TOLERANCES UNLESS SPECIFIED DESCRIPTION mm A =0 C =0 INCH 4 PLACES ±-±-3 PLACES ±-±.005 ±.010 2 PLACES ±-±.020 1 PLACE ±-ANGULAR ±1/2° DIMENSION STYLE SCALE DESIGN UNITS IN/MM 3:4 INCH DRAWN BY DATE

Contextual Info: 13 12 MATERIAL NUMBER 11 OLD PART NUMBER 10 9 FINISHED LENGTH 8 6 7 MATERIAL CABLE 5 3 4 2 1 CABLE COLOR J J I I H H G G F F E E D D C C ITEM COMPONENT MATERIAL FINISH GENERAL TOLERANCES UNLESS SPECIFIED B DESCRIPTION =0 C A 13 12 11 10 9 8 INCH 4 PLACES ±-±-3 PLACES ±-±-±.01

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 MATERIAL OLD PART NUMBER NUMBER J J I I H H G G F F E E D D C ITEM COMPONENT MATERIAL FINISH C GENERAL TOLERANCES UNLESS SPECIFIED B DESCRIPTION =0 C A 13 12 11 10 9 8 INCH 4 PLACES ±-±-3 PLACES ±-±-±.01 2 PLACES ±-±0.3

Contextual Info: 10 9 8 7 6 5 4 3 2 1 F F E E D D C C MATERIAL NUMBER OLD PART NUMBER B MATERIAL FINISH A 10 9 8 7 6 DESCRIPTION COMPONENT 1 REV ITEM DESCRIPTION EC NO: WEU2010-0423 2010/03/10 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/16 APPR: NSTAUDIG B GENERAL TOLERANCES

Contextual Info: 10 9 8 7 6 5 4 3 2 1 F F E E D D C C COMPONENT FINISH MATERIAL B A 10 9 8 7 6 DESCRIPTION ITEM 1 REV B OLD PART NUMBER DESCRIPTION EC NO: WEU2010-0423 2010/03/08 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/16 APPR: NSTAUDIG MATERIAL NUMBER GENERAL TOLERANCES

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 J J I I H H G G F F E MATERIAL NUMBER OLD PART NUMBER E C B ITEM COMPONENT MATERIAL FINISH A 13 12 11 10 9 8 DESCRIPTION C 1 REV D DESCRIPTION EC NO: WEU2010-0451 2010/03/22 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/23 APPR: FPACHER

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 J J I I H H G G F F E E MATERIAL NUMBER OLD PART NUMBER C B ITEM COMPONENT MATERIAL FINISH A 13 12 11 10 9 8 DESCRIPTION C 1 REV D DESCRIPTION EC NO: WEU2010-0451 2010/03/22 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/23 APPR: FPACHER

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 J J I I H H G G F F E E MATERIAL NUMBER OLD PART NUMBER C B ITEM COMPONENT MATERIAL FINISH A 13 12 11 10 9 8 DESCRIPTION C 1 REV D DESCRIPTION EC NO: WEU2010-0451 2010/03/22 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/23 APPR: FPACHER

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 J J I I H H G G F F E E MATERIAL NUMBER OLD PART NUMBER C B ITEM COMPONENT MATERIAL FINISH A 13 12 11 10 9 8 DESCRIPTION C 1 REV D DESCRIPTION EC NO: WEU2010-0451 2010/03/22 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/23 APPR: FPACHER

Contextual Info: 10 9 8 7 6 5 4 3 2 1 F F E E D D C C MATERIAL NUMBER OLD PART NUMBER B 10 9 8 7 6 DESCRIPTION 1 REV A DESCRIPTION EC NO: WEU2010-0450 2010/03/19 DRWN: REISSNER -CH'KD: FP 2010/03/23 APPR: NSTAUDIG B GENERAL TOLERANCES UNLESS SPECIFIED mm INCH 0 4 PLACES ± -± -3 PLACES ± -± -0 2 PLACES ± -± -1 PLACE ± 0.3

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

PT8811

Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Contextual Info: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,

Contextual Info: This document was generated on 08/08/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 130048-0153 Active Brad Ethernet Solutions Micro-Change M12 Double-Ended Cordset with Shielded PVC Cable, Straight to 90°

Contextual Info: 13 J 12 11 10 9 8 6 7 5 3 4 2 1 MATERIAL OLD PART NUMBER NUMBER J I I H H G G F F E E D D C C ITEM COMPONENT MATERIAL FINISH =0 DESCRIPTION B GENERAL TOLERANCES UNLESS SPECIFIED C A 13 12 11 10 9 8 INCH 4 PLACES ±±3 PLACES ±±±.01 2 PLACES ±±0.3 1 PLACE

Contextual Info: 10 9 8 7 6 5 4 3 2 1 F F E E D D MATERIAL NUMBER OLD PART NUMBER B ITEM COMPONENT MATERIAL FINISH A 10 9 8 7 6 DESCRIPTION B 1 REV C DESCRIPTION EC NO: WEU2010-0423 2010/03/12 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/16 APPR: NSTAUDIG C GENERAL TOLERANCES

Contextual Info: 10 9 8 7 6 5 4 3 2 1 F F E E D D MATERIAL NUMBER OLD PART NUMBER C C B B FINISH A 10 9 8 7 6 DESCRIPTION MATERIAL 2 REV COMPONENT DESCRIPTION EC NO: WEU2010-0439 16.03.10 DRWN: BBRAUCH -CH'KD: FP 2010/03/17 APPR: NSTAUDIG ITEM GENERAL TOLERANCES UNLESS SPECIFIED

Contextual Info: 13 12 11 10 9 8 7 6 5 4 3 2 1 J J I I H H G G F F E E MATERIAL NUMBER OLD PART NUMBER C B ITEM COMPONENT MATERIAL FINISH A 13 12 11 10 9 8 DESCRIPTION C 1 REV D DESCRIPTION EC NO: WEU2010-0451 2010/03/22 DRWN: LSTEMMLE -CH'KD: NSTAUDIG 2010/03/23 APPR: FPACHER

Contextual Info: 10 9 F 8 7 6 5 4 3 2 1 F 124.50 107.00 39.00 4.5 33.00 E 54.00 34.00 73.00 E D 22.20 18.00 C D C MATERIAL NUMBER OLD PART NUMBER B MATERIAL FINISH A 10 9 8 7 6 DESCRIPTION COMPONENT 1 REV ITEM DESCRIPTION EC NO: WEU2010-0423 2010/03/10 DRWN: LSTEMMLE -CH'KD: NSTAUDIG

SDQIE1007

Abstract: SD1228 SD1227 SD1225 sd1207 SD1213 SD1219 SD1221 SD1202 SD1209
Contextual Info: Power Inductors Shielded-SMT Square 12 x 12 mm POWER INDUCTORS SDQIE1007 Series Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Medium current capacity. Low DC resistance. Inductance range from 470 nH to 1.0 mH. Energy storage limit of 250 µJ.

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

BFY70

Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax