SCTMU001F Search Results

Contextual Info: SCTMU001F Data Sheet N-channel SiC power MOSFET lOutline VDSS 400V RDS on (Typ.) 120mW ID 20A PD 132W TO220AB (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel

Contextual Info: SCTMU001F Datasheet N-channel SiC power MOSFET Outline VDSS 400V RDS on (Typ.) 120m ID 20A PD 132W TO220AB Features Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.