SCD16 Search Results

SCD12

Abstract: SCD15 SCD16 SCD13 SCD14
Contextual Info: SCD12 THRU SCD16 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts ED T N E T PA Forward Current - 1.0 Ampere 2010 FEATURES .181 4.60 * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications

SCD16

Abstract: SCD12 SCD14
Contextual Info: SCD12 THRU SCD16 VOLTAGE 20V ~ 60V Elektronische Bauelemente 1.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2010 .181 4.60 .173(4.40) FEATURES * * * * * * * * * Plastic package has Underwriters Laboratory Flammability

Contextual Info: SCD12 THRU SCD16 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts ED T N E T PA Forward Current - 1.0 Ampere 2010 FEATURES .181 4.60 .002(0.05) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications

S128K32

Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Contextual Info: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

SAMSUNG SRAM

Abstract: 5962-9318706H4X D1659
Contextual Info: ii ii ii ii ii ii ii ii ACT-S128K32 High Speed - 4 iviegamt o k a m iviuiticnip ivioauie . • ■■ A ■ ■ ■ ■ ■ I ■■ I Features ■ ■ ■ ■ ■ ■ ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM

5962-9318706H4X

Abstract: military mcm 1553 ACT-S128K32 ACT-S128K32V 5962-9318705HTX 5962-9318706HTX 5962-9318709H4X
Contextual Info: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

060P7Q

Contextual Info: — H ACT-F512K32 High Speed H — 16 Megabit FLASH Multichip Module Q eroflex CIRCUIT TECHNOLOGY www.aeroflex.com Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 60, 70, 9 0 ,1 2 0 and 150ns

SCD110H

Abstract: SCD12H MARK X5 SCD16H
Contextual Info: ZOWIE Schottky Barrier Diode 20V~100V / 1.0A SCD12H THRU SCD110H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

S512K8N

Abstract: smd A018 3 pin smd A018 SCD1664 5962-9561307HYC ACT-S512K8 5962-9561310HUC
Contextual Info: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features Low Power Monolithic CMOS 512K x 8 SRAM • Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■ +5 V Power Supply

512K8N

Abstract: ACT-F512K8
Contextual Info: ACT–F512K8 High Speed 4 Megabit Monolithic FLASH CIRCUIT TECHNOLOGY www.aeroflex.com Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Power Monolithic 512K x 8 FLASH TTL Compatible Inputs and CMOS Outputs Access Times of 60, 70, 90, 120 and 150ns

SCD110

Abstract: SCD16 SCD12 SCD14
Contextual Info: SCD12 THRU SCD110 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts TTEEDD N N E E T T A A PP Forward Current - 1.0 Ampere 2010 FEATURES * * * * .181 4.60 .173(4.40) .002(0.05) 0) 0.5 20( R0. 0.091(2.30) 0.083(2.10) 0.045(1.15) 0.045(1.15)

SF128

Contextual Info: ACT–SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY FEATURES www.aeroflex.com • 2 – 128K x 8 SRAMs & 2 – 128K x 8 Flash Die in ■ Packaging – Hermetic Ceramic One MCM ■ Access Times of 25ns SRAM and 60ns (Flash) or

TF-128

Abstract: O031
Contextual Info: I =1? ip £ 3 - 4 i yc 1 il c P>T ps UHHMifht - IJ* 1 4 \k * Q eroflex Cl RCUITTBCHNOLOGY Features • 4 Low Power 128K x 8 FLASH Die in One MCM Package ■ Organized as 128K x 32 • User Configurable to 256K x 16 or 512K x 8 • Upgradable to 512K x 32 in same Package Style

military multichip

Contextual Info: i — i— r 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL & CMOS Compatible Design Fast 17,20,25,35,45,55ns Access Times

ACT-F512K32

Abstract: IO549 060P7Q
Contextual Info: ACT–F512K32 High Speed 16 Megabit FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com Features • 4 Low Power 512K x 8 FLASH Die in One MCM ■ Industry Standard Pinouts ■ Packaging – Hermetic Ceramic Package ■ TTL Compatible Inputs and CMOS Outputs

DPS-400

Abstract: 68995
Contextual Info: DP8400-2 National Semiconductor DP8400-2—E2C2 Expandable Error Checker/Corrector General Description memory check bits or DP8400-2S than the single-error cor­ rect configurations. The DP8400-2 Expandable Error Checker and Corrector E2C2 aids system reliability and integrity by detecting er­

smd code F18

Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

ACT-E128K32N-150F2Q

Contextual Info: ACT–E128K32 High Speed 4 Megabit EEPROM Multichip Module CIRCUIT TECHNOLOGY Features www.aeroflex.com • 4 Low Power 128K x 8 EEPROM Die in One MCM ■ Packaging – Hermetic Ceramic Package ■ Organized as 128K x 32 ● User 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,

cqfp package outline

Contextual Info: il il il il il il il M ACT-S128K32 High Speed - 4 iviegamt shaivi iviumcmp ivioauie. • M ■ ■ ■ ■ ■■■ ■ ■ Features ■■ tìEROFLEX ■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM

39F1

Contextual Info: il il il il il il il il M ACT-SF512K16 High Speed 5“I2!Kx16 SRAM/FLASH Multichip Me C u le . Q er o flex CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES • 2 - 512K x 8 SRAMs & 2 - 512K x 8 Flash Die in One MCM

Contextual Info: ACT-F2M32A High Speed 64 Mei ib it M i l l Sector Erase I I I FLASH Multichip Module Q ero flex CIRCUIT TECHNOLOGY www.aeroflex.com/act1 .htm Features • 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package ■ Overall Configuration is 2M x 32 ■ +5V Power Supply / +5V Programing Operation

Contextual Info: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range

ACT-F2M32A

Abstract: CQFP 240 Aeroflex
Contextual Info: ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One ■ Ready/Busy output RY/BY – Hardware method for MCM Package ■ Overall Configuration is 2M x 32

Contextual Info: 1.0 Amp SCHOTTKY BARRIER RECTIFIERS Data Sheet Mechanical Dimensions SCD12 . . . 16 Series Description Dimensions in inches and mm PACKAGE 2010 Features n EXTREMELY LOW VF n MAJORITY CARRIER CONDUCTION n LOW PROFILE PACKAGE n MEETS UL SPECIFICATION 94V-0