SB5443 Search Results

AFP02N2-55

Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Contextual Info: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator EHAlph 3 ,6 ,1 2 ,2 4 dB Bits DC-1 GHz AT001D6-31 Features • 3 ,6 , 12, 24 dB Bits ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bit Values DC-2 GHz EBAlph AK002D4-24 Features Designed for Commercial Applications Surface Mount 14 Lead SOIC Low DC Current Consumption < 16 mA Total Integral Driver +5V, -5V; CMOS and TTL Compatible