S9G65 Search Results
S9G65 Datasheets (1)
Toshiba
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S9G65 |
|
Microwave Power GAAS Fet | Scan | 77.47KB | 2 |
S9G65 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
S3V 68Contextual Info: TO SH IBA MICROWAVE POWER GasAs FET Non-M atched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G65 Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 2ñ°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at VDS=10V Psat 39.5 40.0 dBm Saturation Point |
OCR Scan |
S9G65 32dBm 36dBm, 600MHz S3V 68 | |
S9G65Contextual Info: TOSHIBA MICROWAVE POWER GasAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G65 Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 2fi°C ^ CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT O utput Power at VDS=10V — dBm Psat 39.5 40.0 Saturation Point |
OCR Scan |
S9G65 32dBm 36dBm, 600MHz S9G65 |