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    S8265 Search Results

    S8265 Datasheets (1)

    Hamamatsu
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    S8265
    Hamamatsu Si photodiode - Visible sensitivity photodiode with high humidity resistance Original PDF 240.01KB 2
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    S8265 Price and Stock

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    Infineon Technologies AG 2EDS8265HXUMA1

    IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
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    TME 2EDS8265HXUMA1 1
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    Avnet Americas 2EDS8265HXUMA1 Tape & Reel 1,000
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    Newark () 2EDS8265HXUMA1 Tape & Reel 39 100
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    2EDS8265HXUMA1 Cut Tape 39 1
    • 1 $4.84
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    EBV Elektronik 2EDS8265HXUMA1 71 Weeks 1,000
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    Vyrian 2EDS8265HXUMA1 10,823
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    Infineon Technologies AG 2EDS8265HXUMA2

    IC: driver; high-side,low-side,gate driver; PG-DSO-16; 8A; Ch: 2
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    TME 2EDS8265HXUMA2 1,000
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    Avnet Americas 2EDS8265HXUMA2 Tape & Reel 3,000 39 Weeks 1,000
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    Mouser Electronics 2EDS8265HXUMA2 67
    • 1 $3.93
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    Newark () 2EDS8265HXUMA2 Cut Tape 139 1
    • 1 $3.93
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    2EDS8265HXUMA2 Tape & Reel 139 100
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    Rochester Electronics 2EDS8265HXUMA2 12,000 1
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    EBV Elektronik 2EDS8265HXUMA2 40 Weeks 1,000
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    Win Source Electronics 2EDS8265HXUMA2 39,480
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    ABLIC Inc. S-8265CAA-K8T2U7

    Battery Protection IC with Cell Balancing Function for 3-serial to 5-serial Cell Pack (Secondary Protection) S-8265C Series
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    Verical S-8265CAA-K8T2U7 90 38
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    Avnet Americas S-8265CAA-K8T2U7 Tape & Reel 16 Weeks 4,000
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    Mouser Electronics S-8265CAA-K8T2U7 3,754
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    Onlinecomponents.com S-8265CAA-K8T2U7
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    Quest Components S-8265CAA-K8T2U7 72
    • 1 $3.59
    • 10 $2.63
    • 100 $2.39
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    Infineon Technologies AG 2EDS8265HXUMA3

    - Tape and Reel (Alt: 2EDS8265HXUMA3)
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    Avnet Americas 2EDS8265HXUMA3 Tape & Reel 1,500
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    Newark () 2EDS8265HXUMA3 Cut Tape 335 1
    • 1 $4.58
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    2EDS8265HXUMA3 Tape & Reel 335 100
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    EBV Elektronik 2EDS8265HXUMA3 31 Weeks 1,500
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    ABLIC Inc. S-8265CAA-I8T1U7

    - Tape and Reel (Alt: S-8265CAA-I8T1U7)
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    Avnet Americas S-8265CAA-I8T1U7 Tape & Reel 16 Weeks 5,000
    • 1 $2.29
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    Mouser Electronics S-8265CAA-I8T1U7
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    Onlinecomponents.com S-8265CAA-I8T1U7
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    S8265 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 高耐湿性 85 °C, 85 %, 1000時間 屋外など湿度が高い場所での調光など 視感度補正フィルタ付 セラミックパッケージ (6 x 8 mm)


    Original
    s8265kspdb0164jakspdb0340jakspdb0171ja+2kspda0127jbkspd1041j02 PDF

    S8265

    Abstract: SE-171
    Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm Applications l Light dimmer in locations at high humidity or for outdoor use


    Original
    s8265se-171kspd1041e01 PDF

    Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


    Original
    s8265se-171kspd1041e01 PDF

    0441

    Abstract: S8265 S-8265
    Contextual Info: PHOTODIODE Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 l 高耐湿性 85 ˚C, 85 %, 1000時間 l 視感度補正フィルタ付 l セラミックパッケージ (6 x 8 mm) l 受光面サイズ: 2.8 × 2.4 mm


    Original
    s8265kspda0127jakspdb0164jakspdb0170ja+5435-85581126-1tel434-3311faxkspd1041j010441s-8265 PDF

    Contextual Info: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm)


    Original
    s8265kspd1041e02 PDF

    transistor 1BW

    Abstract: SE-171 1bw 85 S8265
    Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


    Original
    s8265se-171kspd1041e01transistor 1bw+11bw 85 PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    kspd0001e09near ir photodiodess8745-01s8558 PDF

    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    S8558

    Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original
    s8558 PDF

    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    S-8265

    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge311-mar-11s-8265 PDF

    Si4483ADY

    Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
    Contextual Info: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET


    Original
    si4483adysi4483ady-t1-ge318-jul-08si4483a+1s-82659-rev PDF

    sis430dn

    Abstract: SiS430DN-T1-GE3
    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge318-jul-08 PDF

    SIS430DN

    Abstract: SiS430DN-T1-GE3
    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge311-mar-11 PDF

    Si5419DU

    Contextual Info: Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original
    si5419dusi5419du-t1-ge318-jul-08 PDF

    Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    sis430dnsis430dn-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF