S8265 Search Results
S8265 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S8265 | Hamamatsu | Si photodiode - Visible sensitivity photodiode with high humidity resistance | Original | 240.01KB | 2 |
S8265 Price and Stock
Infineon Technologies AG 2EDS8265HXUMA1IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2EDS8265HXUMA1 | 1 |
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2EDS8265HXUMA1 | Tape & Reel | 1,000 |
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2EDS8265HXUMA1 | Tape & Reel | 39 | 100 |
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| 2EDS8265HXUMA1 | Cut Tape | 39 | 1 |
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2EDS8265HXUMA1 | 71 Weeks | 1,000 |
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2EDS8265HXUMA1 | 10,823 |
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Infineon Technologies AG 2EDS8265HXUMA2IC: driver; high-side,low-side,gate driver; PG-DSO-16; 8A; Ch: 2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2EDS8265HXUMA2 | 1,000 |
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2EDS8265HXUMA2 | Tape & Reel | 3,000 | 39 Weeks | 1,000 |
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2EDS8265HXUMA2 | 67 |
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2EDS8265HXUMA2 | Cut Tape | 139 | 1 |
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| 2EDS8265HXUMA2 | Tape & Reel | 139 | 100 |
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2EDS8265HXUMA2 | 12,000 | 1 |
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2EDS8265HXUMA2 | 40 Weeks | 1,000 |
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2EDS8265HXUMA2 | 39,480 |
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ABLIC Inc. S-8265CAA-K8T2U7Battery Protection IC with Cell Balancing Function for 3-serial to 5-serial Cell Pack (Secondary Protection) S-8265C Series |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S-8265CAA-K8T2U7 | 90 | 38 |
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S-8265CAA-K8T2U7 | Tape & Reel | 16 Weeks | 4,000 |
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S-8265CAA-K8T2U7 | 3,754 |
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S-8265CAA-K8T2U7 |
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S-8265CAA-K8T2U7 | 72 |
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Infineon Technologies AG 2EDS8265HXUMA3- Tape and Reel (Alt: 2EDS8265HXUMA3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2EDS8265HXUMA3 | Tape & Reel | 1,500 |
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2EDS8265HXUMA3 | Cut Tape | 335 | 1 |
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| 2EDS8265HXUMA3 | Tape & Reel | 335 | 100 |
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2EDS8265HXUMA3 | 31 Weeks | 1,500 |
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ABLIC Inc. S-8265CAA-I8T1U7- Tape and Reel (Alt: S-8265CAA-I8T1U7) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S-8265CAA-I8T1U7 | Tape & Reel | 16 Weeks | 5,000 |
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S-8265CAA-I8T1U7 |
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S-8265CAA-I8T1U7 |
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S8265 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 高耐湿性 85 °C, 85 %, 1000時間 屋外など湿度が高い場所での調光など 視感度補正フィルタ付 セラミックパッケージ (6 x 8 mm) |
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s8265kspdb0164jakspdb0340jakspdb0171ja+2 | |
S8265
Abstract: SE-171
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s8265se-171kspd1041e01 | |
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Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use |
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s8265se-171kspd1041e01 | |
0441
Abstract: S8265 S-8265
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s8265kspda0127jakspdb0164jakspdb0170ja+5 | |
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Contextual Info: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm) |
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s8265kspd1041e02 | |
transistor 1BW
Abstract: SE-171 1bw 85 S8265
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s8265se-171kspd1041e01transistor 1bw+1 | |
near IR photodiodes
Abstract: S8745-01 S8558
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kspd0001e09near ir photodiodess8745-01s8558 | |
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Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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sis430dnsis430dn-t1-ge32011/65/eu2002/95/ec+1 | |
S8558Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ |
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s8558 | |
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Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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sis430dnsis430dn-t1-ge32002/95/ec2011/65/eu+2 | |
S-8265Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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sis430dnsis430dn-t1-ge311-mar-11s-8265 | |
Si4483ADY
Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
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si4483adysi4483ady-t1-ge318-jul-08si4483a+1 | |
sis430dn
Abstract: SiS430DN-T1-GE3
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sis430dnsis430dn-t1-ge318-jul-08 | |
SIS430DN
Abstract: SiS430DN-T1-GE3
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sis430dnsis430dn-t1-ge311-mar-11 | |
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Si5419DUContextual Info: Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package |
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si5419dusi5419du-t1-ge318-jul-08 | |
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Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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sis430dnsis430dn-t1-ge32002/95/ec2011/65/eu+2 | |