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    S3C131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S3C marking

    Contextual Info: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.


    OCR Scan     		bf556abf556bbf556c23sht+2bbs3031s3c marking PDF

    BYW29

    Abstract: LC1 Clip M2749
    Contextual Info: N AMER PHILIPS/DISCRETE 25E ß • bb53T31 □ 02273*1 Q ■ B Y W 2 9 SERIES ^ 7 -0 3 -/7 ULTRA FAST RECO VER Y RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery


    OCR Scan     		bb53t31g02273byw29t-03-17+2lc1 clipm2749 PDF

    42t SOT23

    Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40
    Contextual Info: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.


    OCR Scan     		btjs3t310db3540bf556abf556b+6bf556ckbs313142t sot23marking codes power devices philipsmarking 42tphilips ks 40 PDF