S2245 Search Results

Contextual Info: STANDARD MARKING FORMAT * S2245 PECL VCXO 2 OPERATING TEMPERATURE RANGE: 3) STORAGE TEMPERATURE RANGE: -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated +5VDC ±5% 5) INPUT (SUPPLY) CURRENT: 70 mA typ, 100 mA max 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY)

SKY12348-362LF

Abstract: s2243
Contextual Info: DATA SHEET SKY12348-362LF: 0.1-3.0 GHz Four-Bit Digital Attenuator 1 dB LSB Applications RF2 • Cellular, 3G/4G, WiMAX, and LTE Infrastructures  RF and IF systems 8 dB V1 Features  Broadband operation: 0.1 to 3.0 GHz  Attenuation: 15 dB with 1 dB LSB

transistor D 4515

Abstract: 224515 KS224515 ks2245
Contextual Info: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5

S1692

Abstract: s2244 S1691 S2245 s2243
Contextual Info: DATA SHEET SKY12348-350LF: 0.1-3.0 GHz Four-Bit Digital Attenuator 1 dB LSB Applications RF2 • Cellular, 3G/4G, WiMAX, and LTE Infrastructures  RF and IF systems 8 dB V1 Features  Broadband operation: 0.1 to 3.0 GHz  Attenuation: 15 dB with 1 dB LSB

Contextual Info: S2245 PRELIMINARY flAI • A C S2245 Soft Modem Stik s e m ic o n d u c to r FEATURES PIN DESCRIPTION •Reprogram m able, +5V modem subsystem available in 1200 or 2400 bps versions • User-transferable FCC modem registration when used with DS2249 D M Stik

Westinghouse diode

Abstract: powerex cd ks2245
Contextual Info: 72^21 OODDÛTT 0 Single Darlington TRANSISTO R Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 A" ~\ T-33-35 10 0 Amperes 4 5 0 /1 0 0 0 Volts Millimeters 94 Max 80 ± 0 .5 20 M 5 x1 0 34 Max 27 8 31 Max

SUD50N02-12P

Abstract: 9046a
Contextual Info: SUD50N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency ID (A)a 0.012 @ VGS = 10 V 17 0.026 @ VGS = 4.5 V

SUD50N02-09P

Contextual Info: SUD50N02-09P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 APPLICATIONS 0.017 @ VGS = 4.5 V 15 D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20

SUM110N02-03P

Contextual Info: SUM110N02-03P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0032 @ VGS = 10 V 110a 0.0052 @ VGS = 4.5 V 110a V(BR)DSS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous

SUM110N04-04

Contextual Info: SUM110N04-04 New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature APPLICATIONS D Automotive

SUM110N02-03P

Contextual Info: SUM110N02-03P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0032 @ VGS = 10 V 110a 0.0052 @ VGS = 4.5 V 110a V(BR)DSS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous

SUM110N02-03P

Contextual Info: SUM110N02-03P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0032 @ VGS = 10 V 110a 0.0052 @ VGS = 4.5 V 110a V(BR)DSS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous

SUD50N02-11P

Contextual Info: SUD50N02-11P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency ID (A)a 0.011 @ VGS = 10 V 18 0.020 @ VGS = 4.5 V