S1110 Search Results

Contextual Info: CMOSリニアイメージセンサ S11106-10 S11107-10 小型で高いコストパフォーマンスを実現 S11106-10・S11107-10はビデオデータレート10 MHz低消費電流を実現した樹脂封止型のCMOSリニアイメージセンサ です。S11106-10の画素サイズは63.5 x 63.5 m、S11107-10は127 × 127 μmです。

Contextual Info: high performance needs great design. Datasheet: S1110 Constant-Current, 16-Channel LED Driver with Diagnostics Please be patient while we update our brand image as austriamicrosystems and TAOS are now ams. www.ams.com A S1110 Co nstant-C urrent, 16-C hannel LED Driver with Diagnostics

P180-G1

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : S11100032 Energy Harvesting Induktivität WE-EHP Energy Harvesting Power Inductor WE-EHP DATUM / DATE : 2011-07-01 120 2 2

P180-G1

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : S11100034 Energy Harvesting Induktivität WE-EHP Energy Harvesting Power Inductor WE-EHP DATUM / DATE : 2011-07-01 120 2 2

S11106

Abstract: ST32F S11107
Contextual Info: CMOS linear image sensors S11106 S11107 Compact size and high cost-performance The S11106 and S11107 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10 MHz and low current consumption. The pixel size is 63.5 x 63.5 m S11106 , 127 × 127 μm (S11107).

S11108

Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

S11108

Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.

S11108

Abstract: KMPDC0366EB 74HC541
Contextual Info: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14

Contextual Info: CMOS linear image sensors S11106 S11107 Compact size and high cost-performance The S11106 and S11107 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10 MHz and low current consumption. The pixel size is 63.5 x 63.5 m S11106 , 127 × 127 μm (S11107).

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : S11100033 Energy Harvesting Induktivität WE-EHP Energy Harvesting Power Inductor WE-EHP DATUM / DATE : 2011-07-01 120 2 2

Contextual Info: CMOSリニアイメージセンサ S11105シリーズ 高速ビデオデータレート: 50 MHz S11105シリーズはビデオデータレート 50 MHzを実現したCMOSリニアイメージセンサです。パッケージは、DIPタイプ と表面実装型の2種類を用意しています。

CH 89 A15A

Contextual Info: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14

S11108

Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

s11105

Contextual Info: CMOS linear image sensors S11105 series High-speed video data rate: 50 MHz The S11105 series is a CMOS linear image sensor that delivers a video data rate of 50 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Applications

Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

Contextual Info: CMOS linear image sensors S11105 series High-speed video data rate: 50 MHz The S11105 series is a CMOS linear image sensor that delivers a video data rate of 50 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Applications

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature

Contextual Info: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: Package Information Vishay Siliconix MICRO FOOT: 16-BUMP 4 mm x 4 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT 6 X Ø 0.150 ~ 0.229 Note b Solder Mask Ø ~ Pad Diameter + 0.1 Silicon A2 A A1 0.5 Bump Note a 4 3 2 1 b Diameter 0.5 A Recommended Land Pattern e Index-Bump A1