MMBTA42(RANGE:100-200)
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JCET Group
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MMBTA42 NPN transistor in SOT-23 package featuring 300 V collector-base and collector-emitter breakdown voltage, low collector-emitter saturation voltage of 0.2 V at 20 mA base current, DC current gain up to 200, and transition frequency of 50 MHz. |
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MMBT2907A(RANGE:100-300)
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JCET Group
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MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300. |
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BC637-TA(RANGE:100-250)
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JCET Group
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NPN transistors BC635, BC637, and BC639 feature high current handling with continuous collector current of 1 A, collector-emitter voltage ratings from 45 V to 80 V, power dissipation of 0.83 W, and DC current gain up to 250, housed in TO-92 package. |
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BC638-TA(RANGE:100-250)
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JCET Group
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PNP transistors BC636, BC638, and BC640 in TO-92 package with high current capability, featuring collector current up to -1 A, collector-base voltage from -45 V to -100 V, and DC current gain up to 250. |
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2SA1013(RANGE:100-200)
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JCET Group
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2SA1013 PNP transistor in TO-92MOD package with -160V collector-base and collector-emitter voltage, -1A continuous collector current, 0.9W power dissipation, DC current gain from 60 to 320, and transition frequency of 15MHz. |
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2SC1923(RANGE:100-200)
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JCET Group
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NPN transistor in TO-92 package, rated for 30 V collector-emitter voltage, 100 mW power dissipation, with DC current gain from 40 to 200 and transition frequency of 550 MHz. |
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MMBT3906T(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. |
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BCX51-16(RANGE:100-250)
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JCET Group
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PNP transistor in SOT-89-3L package, part of BCX51, BCX52, BCX53 series, with collector-base voltage up to -100 V, collector current up to -1 A, DC current gain from 63 to 250, and transition frequency up to 50 MHz. |
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2N4403-TA(RANGE:100-300)
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JCET Group
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PNP transistor in TO-92 package with -40V collector-base and collector-emitter voltage, -600mA continuous collector current, 0.625W power dissipation, and DC current gain (hFE) up to 300. |
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2SD1802(RANGE:100-200)
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JCET Group
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NPN transistor in TO-252-2L plastic package featuring 50 V collector-emitter voltage, 3 A continuous collector current, low collector-emitter saturation voltage of 0.5 V, high DC current gain up to 560, and transition frequency of 150 MHz. |
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2SB649A(RANGE:100-200)
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JCET Group
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PNP transistor in TO-126 package, rated for -120V or -160V collector-emitter voltage (2SB649/2SB649A), with 1.5A continuous collector current, 1W power dissipation, and DC current gain ranging from 60 to 320 depending on rank. |
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BC807-16(RANGE:100-250)
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JCET Group
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BC807 PNP transistor in SOT-23 package, featuring 45 V collector-emitter breakdown voltage, -500 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
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MPSA06-TA(RANGE:100-400)
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JCET Group
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NPN transistor in TO-92 package with collector-base and collector-emitter breakdown voltages of 80 V, emitter-base breakdown voltage of 4 V, continuous collector current of 0.5 A, and collector power dissipation of 625 mW. |
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MMBT3904T(RANGE:100-300)
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JCET Group
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MMBT3904T is an NPN transistor in a SOT-523 plastic package, with a collector current of 200 mA, collector-emitter voltage of 40 V, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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2SD1815(RANGE:100-200)
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JCET Group
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NPN transistor in TO-252-2L package with 100V collector-emitter voltage, 3A continuous collector current, 1W power dissipation, high transition frequency of 180MHz, and low collector-emitter saturation voltage of 0.4V at 1.5A. |
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BD139(RANGE:100-250)
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JCET Group
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NPN transistor in TO-126 package, available as BD135, BD137, or BD139, with collector current up to 1.5 A, collector-emitter voltage from 45 V to 80 V, and DC current gain up to 250. |
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MMBT4401(RANGE:100-300)
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JCET Group
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MMBT4401 NPN transistor in SOT-23 package, with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, 300mW power dissipation, and transition frequency of 250MHz. |
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MMDT5451(10K)(RANGE:100-300)
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JCET Group
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Dual transistor (NPN+PNP) in SOT-363 package featuring 5551 NPN and 5401 PNP types, with 160 V collector-emitter breakdown voltage, 0.2 A continuous collector current, 0.2 W power dissipation, and hFE up to 300. |
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MPSA44(RANGE:100-200)
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JCET Group
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NPN transistor in TO-92 package with 400 V collector-emitter breakdown voltage, 0.3 A continuous collector current, 625 mW power dissipation, and DC current gain ranging from 40 to 200 depending on test conditions. |
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MMBT3904(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBTA42(RANGE:100-200)
