RS1G Search Results

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYD60A02PT 200V / 60A VF=1.1V @ IF=30A, trr=30ns

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYD60A12EP 1200V / 60A VF=2.5V@IF=60A, trr=65ns

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYD5A06FT 600V / 5A VF=1.8V @ IF=5A, trr=20ns

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD2045FN2 Single Channel Low Capacitance ESD Protection Diode Array

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD0514P 4 Channel Low Capacitance ESD Protection Diode Array

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD2025S Bi-Directional Transient Voltage Suppressing Diode

Contextual Info: RS1G120MN Nch 40V 12A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 16.2mW RDS(on) at 4.5V (Max.) 20.7mW ID 12A PD 3.0W lFeatures (8) HSOP8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSOP8).

Contextual Info: RS1A/B - RS1M/B 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER SPICE MODELS: RS1A RS1B RS1D RS1G RS1J RS1K RS1M RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB Features • · · · · · Glass Passivated Die Construction Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current

RS1D-13-F

Abstract: RS1JB-13-F
Contextual Info: SPICE MODELS: RS1A RS1B RS1D RS1G RS1J RS1K RS1M RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB RS1A/B - RS1M/B 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features • · · · · · Glass Passivated Die Construction Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability

Contextual Info: RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency

Contextual Info: RS1G150MN Nch 40V 15A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 10.6mW RDS(on) at 4.5V (Max.) 13.3mW ID 15A PD 3.0W lFeatures (8) HSOP8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant

RS1D

Contextual Info: SPICE MODELS: RS1A RS1B RS1D RS1G RS1J RS1K RS1M RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB RS1A/B - RS1M/B 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features • · · · · Glass Passivated Die Construction Fast Recovery Time For High Efficiency Surge Overload Rating to 30A Peak

Contextual Info: RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Fast switching for high efficiency

Contextual Info: RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Fast switching for high efficiency

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD1025QG 2 Channel Low Capacitance ESD Protection Diode Array

Contextual Info: RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency

Contextual Info: RS1G300GN Nch 40V 30A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 2.5mΩ ID ±30A PD 3W HSOP8 l Inner circuit l Features 1) Low on - resistance.

RX1G10HMN

Abstract: RMJ700N04 RMJ10HN04 RMJ800N04 RMJ10HN power MOSFET QGD FOM RMH170N04
Contextual Info: New Product Bulletin 40V Power MOSFETs for DC/DC Converters Series Ultra-low loss and industry-leading efficiency - ideal for a variety of applications in the commercial, industrial, and automotive sectors

Contextual Info: RS1G180MN Nch 40V 18A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 7.0mW RDS(on) at 4.5V (Max.) 9.2mW ID 18A PD 3.0W lFeatures (8) HSOP8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSOP8).

Contextual Info: RS1G180MN Nch 40V 18A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 7.0mW RDS(on) at 4.5V (Max.) 9.2mW ID 18A PD 3.0W lFeatures (8) HSOP8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSOP8).

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYD8A06FT 600V / 8A VF=2.1V @ IF=8A, trr=22ns

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYD30A06T 600V / 30A VF=2.2V @ IF=30A, trr=52ns

D92-02

Abstract: D9202 d92 02 diode d92-02 diode d92 02
Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 D92-02 200V / 20A VF=1.1V@IF=10A, trr=34ns

Contextual Info: RS1G260MN Nch 40V 26A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 26A PD 3.0W lFeatures (8) HSOP8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSOP8).