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    Renesas Electronics Corporation

    Renesas Electronics Corporation RJK1206JPD-00-J3

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    Bristol Electronics RJK1206JPD-00-J3 1,584
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    RJK1206JPD Datasheets Context Search

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    RJK1206JPD

    Contextual Info: Preliminary Datasheet RJK1206JPD 120 V - 30 A - N Channel Power MOS FET High Speed Power Switching R07DS0690EJ0200 Rev.2.00 Sep 19, 2012 Features •    For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 42 m typ. Low input capacitance: Ciss = 1600 pF typ


    Original     		RJK1206JPD AEC-Q101 R07DS0690EJ0200 PRSS0004ZD-C RJK1206JPD PDF

    RJK1206JPD-00-J3

    Abstract: RJK1206JPD
    Contextual Info: Preliminary Datasheet RJK1206JPD 120 V - 30 A - N Channel Power MOS FET High Speed Power Switching R07DS0690EJ0300 Rev.3.00 May 23, 2013 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 41 mΩ typ. Low input capacitance: Ciss = 1600 pF typ


    Original     		RJK1206JPD R07DS0690EJ0300 AEC-Q101 PRSS0004ZD-C RJK1206JPD-00-J3 RJK1206JPD PDF